Results 31 to 40 of about 108 (78)

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 7, 6 April 2026.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Monolithic integration of sub-volt memristor-driven pixels for capacitorless active-matrix micro-LED displays

International Journal of Extreme Manufacturing
Active-matrix (AM) micro light-emitting diode (micro-LED) displays rely on transistors and capacitors, thereby limiting integration density, power efficiency, and manufacturing simplicity.
Ho Jin Lee, Seok Hee Hong, Kyung Rock Son, Sim Hun Yuk, Sung Keun Choi, Tukaram D Dongale, Tae Geun Kim   +6 more
doaj   +1 more source

Novel Single-Stage Electrolytic Capacitor-Less Buck-Boost Inverter

Energies
Nowadays, single-phase, single-stage, buck-boost power inverters are mostly considered to be used for renewable energy source applications due to their wide range of capabilities.
Youn-Ok Choi, Khai M. Nguyen
doaj   +1 more source

Oxygen Plasma‐Treated Dielectric‐Channel Interface for BEOL‐Compatible IGZO TFTs with High Electrical Stability

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
Oxygen plasma treatment is applied to ALD‐Al2O3 dielectric layers to reduce H content within the dielectric, thereby suppressing H diffusion in IGZO TFTs. Under a 2 MV/cm electric field for 104 s, the threshold voltage shift remained minimal at only 3.5 mV.
Shaocong Lv, Shuaiying Zheng, Xianglong Li, Tan Zhang, Baoqing Zhang, Huayu Feng, Fei Wang, Qian Xin, Yuxiang Li, Jiawei Zhang, Aimin Song   +10 more
wiley   +1 more source

Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Micromachines, 2023
Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices.
Juhee Jeon, Kyoungah Cho, Sangsig Kim
doaj   +1 more source

Real‐Time Unsupervised Learning and Image Recognition via Memristive Neural Integrated Chip Based on Negative Differential Resistance of Electrochemical Metallization Cell Neuron Device

Small, Volume 21, Issue 21, May 26, 2025.
Spiking neurons enabling integrate function with extremely low‐voltage without capacitors are essentially necessary for building a biomimetic spiking‐neural‐network. Here, a capacitorless memristive‐neural integrated chip (MnIC) based on an electrochemical metallization cell operated at an extremely low voltage of ≈0.7 V, demonstrating real‐time ...
Dae‐Seong Woo, Jae‐Kyeong Kim, Gwang‐Ho Park, Woo‐Guk Lee, Min‐Jong Han, Soo‐Min Jin, Tae‐Hun Shim, Jae‐Joon Kim, Jinsub Park, Jea‐Gun Park   +9 more
wiley   +1 more source

IGZO CIM: Enabling In-Memory Computations Using Multilevel Capacitorless Indium–Gallium–Zinc–Oxide-Based Embedded DRAM Technology

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022
Compute-in-memory (CIM) is a promising approach for efficiently performing data-centric computing (such as neural network computations). Among the multiple semiconductor memory technologies, embedded DRAM (eDRAM), which integrates the DRAM bit cell with ...
Siddhartha Raman Sundara Raman, Shanshan Xie, Jaydeep P. Kulkarni   +2 more
doaj   +1 more source

Analysis and Mitigation Strategies of Energy Backflow in an IPMSM Drive System With a Small DC‐Link Capacitor

IET Electric Power Applications, Volume 19, Issue 1, January/December 2025.
(1) Identifying and analysing the energy backflow phenomenon in small dc‐link capacitor‐based PMSM drive systems. (2) proposing an optimised flux weakening control method and an optimal phase angle selection strategy to mitigate this issue and suppress current ripple caused by dc‐link voltage fluctuations.
Jun Yan, Zi Qiang Zhu, Ximeng Wu, Han Yang, Lianghui Yang, Chaohui Liu   +5 more
wiley   +1 more source

Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation

Advanced Materials Technologies, Volume 9, Issue 15, August 7, 2024.
Capacitorless two‐transistor DRAM cells comparing amorphous indium–tin–gallium–zinc oxide TFTs are designed for synaptic devices that require a proportional relationship between the IOUT and VIN of the cells as a prerequisite. The cells have a long retention time of 1000 s, owing to the extremely low leakage current of oxide TFTs.
Seungho Ryu, Mingu Kang, Kyoungah Cho, Sangsig Kim   +3 more
wiley   +1 more source

A New Electron Bridge Channel 1T-DRAM Employing Underlap Region Charge Storage

IEEE Journal of the Electron Devices Society, 2017
We experimentally demonstrate a new type of silicon-based capacitorless one-transistor dynamic random access memory (1T-DRAM) with an electron-bridge channel. The fabrication steps are fully compatible with modern CMOS technology.
Jyi-Tsong Lin, Wei-Han Lee, Po-Hsieh Lin, Steve W. Haga, Yun-Ru Chen, Abhinav Kranti   +5 more
doaj   +1 more source