Results 21 to 30 of about 260 (208)

Feature Vector Effectiveness Evaluation for Pattern Selection in Computational Lithography

Photonics
Pattern selection is crucial for optimizing the calibration process of optical proximity correction (OPC) models in computational lithography. However, it remains a challenge to achieve a balance between representative coverage and computational ...
Yaobin Feng, Jiamin Liu, Hao Jiang, Shiyuan Liu   +3 more
doaj   +1 more source

Microscale and nanoscale strain mapping techniques applied to creep of rocks [PDF]

Solid Earth, 2017
Usually several deformation mechanisms interact to accommodate plastic deformation. Quantifying the contribution of each to the total strain is necessary to bridge the gaps from observations of microstructures, to geomechanical descriptions, to ...
A. Quintanilla-Terminel, M. E. Zimmerman, B. Evans, D. L. Kohlstedt   +3 more
doaj   +1 more source

Reduced basis method for computational lithography [PDF]

SPIE Proceedings, 2009
A bottleneck for computational lithography and optical metrology are long computational times for near field simulations. For design, optimization, and inverse scatterometry usually the same basic layout has to be simulated multiple times for different values of geometrical parameters. The reduced basis method allows to split up the solution process of
Pomplun, J., Zschiedrich, L., Burger, S., Schmidt, F.   +3 more
openaire   +2 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Experimental investigation of a near-field focusing performance of the IP-Dip polymer based 2D and 3D Fresnel zone plate geometries fabricated using 3D laser lithography coated with hyperbolic dispersion surface layered metamaterial

Nanophotonics, 2023
Herein we investigate the character of the near-field emission of a two- (2D) and novel three-dimensional (3D) probe geometries fabricated using 3D direct laser writing lithography.
Micek Patrik, Belosludtsev Alexandr, Gric Tatjana, Pudis Dusan, Gaso Peter, Goraus Matej   +5 more
doaj   +1 more source

Layout pattern analysis and coverage evaluation in computational lithography

Optics Express, 2023
In advanced semiconductor technology nodes, the model accuracy of optical proximity correction (OPC) is the key for integrated circuit (IC) chip mask tape out, yield ramp up, and product time-to-market. An accurate model means a small prediction error for the full chip layout.
Yaobin Feng, Zhiyang Song, Jiaman Liu, Zhiqin Li, Feng Yang, Hao Jiang, Shiyuan Liu   +6 more
openaire   +2 more sources

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source

Fast source mask co-optimization method for high-NA EUV lithography

Opto-Electronic Advances
Extreme ultraviolet (EUV) lithography with high numerical aperture (NA) is a future technology to manufacture the integrated circuit in sub-nanometer dimension.
Ziqi Li, Lisong Dong, Xu Ma, Yayi Wei
doaj   +1 more source

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2010
The present paper considers optimization of lens adjustment in semiconductor lithography equipment. For improving productivity, the laser irradiation power of recent semiconductor lithography equipment has been boosted, which causes significant ...
Yuji SHINANO, Toshiyuki YOSHIHARA, Ryuhei MIYASHIRO, Youzou FUKAGAWA   +3 more
doaj   +1 more source

3D Hydrodynamic Flow Lithography

Advanced Functional Materials, EarlyView.
ABSTRACT Continuous‐ and stop‐flow lithography are widely used to fabricate multi‐dimensional microstructures whose cross‐sectional morphology is dictated by the flow profile of multiple co‐flowing streams. Here, we introduce three‐dimensional hydrodynamic flow lithography (3D HFL), a platform for programmable generation of multi‐layered flow profiles ...
Yiying Zou, Mehmet Akif Sahin, Muhammad Zia Ullah Khan, Muhammad Usman Akhtar, Daniel Stoecklein, Ghulam Destgeer   +5 more
wiley   +1 more source