Results 41 to 50 of about 260 (208)
Inverse lithography technology (ILT) plays a pivotal role in advanced semiconductor manufacturing because it enables pixel-level mask modifications, significantly enhances pattern fidelity, and expands process windows. However, traditional gradient-based
Jie Zhou +5 more
doaj +1 more source
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
For vertical interconnect access (VIA) in three-dimensional (3D) structure chips, including those with high bandwidth memory (HBM), shrinking contact holes (C/Hs) using the resist flow process (RFP) represents the most promising technology for low-k1 ...
Sang-Kon Kim
doaj +1 more source
Implementation of an autocorrelation-based adaptive alignment mark detection method in electron beam lithography [PDF]
High accuracy and precision overlay and stitching in electron beam lithography demand rapid and robust detection of alignment marks. Here, we implement an autocorrelation-based adaptive alignment mark detection method that processes one-dimensional ...
Zhixuan Pan +8 more
doaj +1 more source
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
A plasmonic filter applied in visible regime is proposed on the basis of hexagonally arranged triangular silver nanoparticle arrays. A method using discrete dipole approximation (DDA) to aid design parameters of the silver nanoparticle arrays is adopted
Jing Liu +3 more
doaj +1 more source
Computational Proximity Lithography with extreme ultraviolet Radiation
Nowadays, EUV projection lithography has been proven effective for high-volume manufacturing of microchips. In parallel, high-resolution nanopatterning has been demonstrated utilizing interference lithography. However, the former suffers from the complexity of projection optics, and the latter is limited to periodic structures. The presented approach –
openaire +2 more sources
Switchable Magnonic Crystals Based on Spin Crossover/CrSBr Heterostructures
Multiscale modeling is employed to investigate the functionality of a light‐controlled, tunable magnonic crystal based on spin‐crossover Fe‐pz molecules integrated with a monolayer of CrSBr. Ab initio simulations confirm that the molecules remain functional on the CrSBr surface, while a semiclassical elastic model demonstrates that light‐induced ...
Andrei Shumilin +4 more
wiley +1 more source
Chip designers employ computer-aided design, circuit simulation, and design rule check systems. Lithography engineers employ model-based OPC (Optical Proximity Correction) and model-based print-simulation systems.
Chenmin Hu +3 more
doaj +1 more source

