Results 41 to 50 of about 1,697,138 (284)

Progress in EUV resist screening by interference lithography for high-NA lithography [PDF]

, 2021
The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI.
Vockenhuber, M. (author), Yeh, C.-K. (author), van Lent-Protasova, L. (author), Santaclara, J.G. (author), Kazazis, D. (author), Allenet, T. (author), Ekinci, Y. (author)   +6 more
core   +1 more source

Solvent immersion nanoimprint lithography of fluorescent conjugated polymers [PDF]

, 2015
This work was supported by Engineering and Physical Sciences Research Council (EPSRC) Programme Grants: (EP1J01771X), (EP/K00042X), (EP/J5005491), and (EP/K503162).Solvent immersion imprint lithography (SIIL) was used to directly nanostructure conjugated
J. R. Y. Stevenson, Samuel, Ifor David William, B. Ebenhoch, I. D. W. Samuel, S. Zhang, Whitworth, Guy Luke, G. L. Whitworth, Stevenson, James Robert Young, Zhang, Shuyu, Ebenhoch, Bernd, Turnbull, Graham A., G. A. Turnbull   +11 more
core   +1 more source

Machine Learning-Enhanced Model-Based Optical Proximity Correction by Using Convolutional Neural Network-Based Variable Threshold Method

IEEE Access
As the lithography process continues to become more rigorous in advanced technology nodes, the model-based optical proximity correction (MBOPC), as a core component within computational lithography, necessitates the development of highly precise ...
Jinhao Zhu, Zhiwei Ren, Ying Li, Xianhe Liu, Qiang Wu, Yanli Li, Qi Wang   +6 more
doaj   +1 more source

Mass production-enabled computational spectrometers based on multilayer thin films

Scientific Reports, 2022
Multilayer thin film (MTF) filter arrays for computational spectroscopy are fabricated using stencil lithography. The MTF filter array is a 6 × 6 square grid, and 169 identical arrays are fabricated on a single wafer.
Cheolsun Kim, Pavel Ni, Kang Ryeol Lee, Heung-No Lee   +3 more
doaj   +1 more source

Fabrication of macroporous polysilicon by using nanosphere lithography

, 2007
Nanosphere lithography (NSL) has been demonstrated to be a feasible, alternative technique for the fabrication of macroporous polysilicon. The diameter of the pore can be controlled by RIE of the fabricated nanospheres template using Ar/O gas mixtures at
Melvin, T., Chau, C.F.
core   +2 more sources

Efficient fullwave-guided optical proximity correction [PDF]

AIP Advances
The continuous shrinking of process nodes in lithography intensifies wave effects and causes mismatches between the designed mask patterns and the actual features printed on the wafer.
Zekui Jia, Luis Gomez, Weng Cho Chew, Austin Peng, Ronald Goossens   +4 more
doaj   +1 more source

Guest Editorial: Computational Lithography [PDF]

Journal of Micro/Nanolithography, MEMS, and MOEMS, 2009
This PDF file contains the editorial “Guest Editorial: Computational Lithography” for JM3 Vol.
openaire   +1 more source

Progress in EUV resist screening towards the deployment of high-NA lithography [PDF]

, 2021
The development of EUV resists is one of the major challenges for the deployment of high-NA EUV lithography, which is on the roadmap for high-volume manufacturing of future semiconductor technology nodes.
Vockenhuber, M. (author), Yeh, C.-K. (author), Wang, X. (author), Mochi, I. (author), Santaclara, J.G. (author), Allenet, T. (author), Van Lent-Protasova, L. (author), Ekinci, Y. (author)   +7 more
core   +1 more source

Microscale and nanoscale strain mapping techniques applied to creep of rocks [PDF]

Solid Earth, 2017
Usually several deformation mechanisms interact to accommodate plastic deformation. Quantifying the contribution of each to the total strain is necessary to bridge the gaps from observations of microstructures, to geomechanical descriptions, to ...
A. Quintanilla-Terminel, M. E. Zimmerman, B. Evans, D. L. Kohlstedt   +3 more
doaj   +1 more source

Layout pattern analysis and coverage evaluation in computational lithography

Optics Express, 2023
In advanced semiconductor technology nodes, the model accuracy of optical proximity correction (OPC) is the key for integrated circuit (IC) chip mask tape out, yield ramp up, and product time-to-market. An accurate model means a small prediction error for the full chip layout.
Yaobin Feng, Zhiyang Song, Jiaman Liu, Zhiqin Li, Feng Yang, Hao Jiang, Shiyuan Liu   +6 more
openaire   +2 more sources