Results 41 to 50 of about 7,747 (289)

Inverse Design of High-NA Metalens for Maskless Lithography

, 2022
We demonstrate an axisymmetric inverse-designed metalens to improve the performance of zone-plate-array lithography (ZPAL), one of the maskless lithography approaches, that offer a new paradigm for nanoscale research and industry.
Haejun Chung (5565737), Owen D. Miller (2823914), Feng Zhang (6548), Henry I. Smith (2660797), Hao Li (31608)   +4 more
core   +2 more sources

Layout pattern analysis and coverage evaluation in computational lithography

Optics Express, 2023
In advanced semiconductor technology nodes, the model accuracy of optical proximity correction (OPC) is the key for integrated circuit (IC) chip mask tape out, yield ramp up, and product time-to-market. An accurate model means a small prediction error for the full chip layout.
Yaobin Feng, Zhiyang Song, Jiaman Liu, Zhiqin Li, Feng Yang, Hao Jiang, Shiyuan Liu   +6 more
openaire   +2 more sources

Extreme long range process effects characterization and compensation

, 2022
Art.88860FProximity Effects in electron beam lithography impact feature dimensions, pattern fidelity and uniformity. These effects are addressed using a mathematical model representing the radial exposure intensity distribution induced by a point ...
Figueiro, T., Vannuffel, C., Hohle, C., Hoon Choi, K., Tortai, J.-H., Schiavone, P., Browning, C., Thornton, M.J.   +7 more
core   +1 more source

Microscale and nanoscale strain mapping techniques applied to creep of rocks [PDF]

Solid Earth, 2017
Usually several deformation mechanisms interact to accommodate plastic deformation. Quantifying the contribution of each to the total strain is necessary to bridge the gaps from observations of microstructures, to geomechanical descriptions, to ...
A. Quintanilla-Terminel, M. E. Zimmerman, B. Evans, D. L. Kohlstedt   +3 more
doaj   +1 more source

Reduced basis method for computational lithography [PDF]

SPIE Proceedings, 2009
A bottleneck for computational lithography and optical metrology are long computational times for near field simulations. For design, optimization, and inverse scatterometry usually the same basic layout has to be simulated multiple times for different values of geometrical parameters. The reduced basis method allows to split up the solution process of
Pomplun, J., Zschiedrich, L., Burger, S., Schmidt, F.   +3 more
openaire   +2 more sources

Experimental investigation of a near-field focusing performance of the IP-Dip polymer based 2D and 3D Fresnel zone plate geometries fabricated using 3D laser lithography coated with hyperbolic dispersion surface layered metamaterial

Nanophotonics, 2023
Herein we investigate the character of the near-field emission of a two- (2D) and novel three-dimensional (3D) probe geometries fabricated using 3D direct laser writing lithography.
Micek Patrik, Belosludtsev Alexandr, Gric Tatjana, Pudis Dusan, Gaso Peter, Goraus Matej   +5 more
doaj   +1 more source

An Experimental High‐Throughput Approach for the Screening of Hard Magnet Materials

Advanced Engineering Materials, EarlyView.
An entire workflow for the high‐throughput characterization and analysis of compositionally graded magnetic films is presented. Characterization protocols, data management tools and data analysis approaches are illustrated with test case Sm(Fe, V)12 based films.
William Rigaut, Pierre Le Berre, Hamdi Jaballah, Lukas Fink, Victor Poline, Richard Haettel, Stéphane Grenier, Gilbert Chahine, Ewen Bellec, Guillaume Buatier, Wilfried Hortschitz, Santa Pile, Thomas Schrefl, Nils Blanc, Yuan Hong, Thibaut Devillers, Nora M. Dempsey   +16 more
wiley   +1 more source

Fast source mask co-optimization method for high-NA EUV lithography

Opto-Electronic Advances
Extreme ultraviolet (EUV) lithography with high numerical aperture (NA) is a future technology to manufacture the integrated circuit in sub-nanometer dimension.
Ziqi Li, Lisong Dong, Xu Ma, Yayi Wei
doaj   +1 more source

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2010
The present paper considers optimization of lens adjustment in semiconductor lithography equipment. For improving productivity, the laser irradiation power of recent semiconductor lithography equipment has been boosted, which causes significant ...
Yuji SHINANO, Toshiyuki YOSHIHARA, Ryuhei MIYASHIRO, Youzou FUKAGAWA   +3 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source