Results 241 to 250 of about 35,175 (290)

Reactive ion etching and deep reactive ion etching processes

2nd International Conference on Mechanical, Electronics, and Electrical and Automation Control (METMS 2022), 2022
YiHan WU, HaiLin He
exaly   +2 more sources

Wafer Bevel Protection During Deep Reactive Ion Etching

IEEE Transactions on Semiconductor Manufacturing, 2011
During deep reactive ion etching of silicon used for through silicon via or deep trench isolation processing, the bevel of the wafer is also etched away. The etching of the bevel results in a deep step at the litho edge bead removal or in a degraded bevel shape, source of yield loss or processing issues.
Rémy Charavel, Jaume Roig, Efraín Altamirano-Sanchez, Joke van Aelst, Katia Devriendt, Koen van Wichelen, Pierre Gassot, Peter Coppens, Eddy De Backer   +8 more
exaly   +2 more sources

Deep reactive ion etching of PMMA

Applied Surface Science, 2004
Abstract The deep reactive ion etching of PMMA in O 2 , O 2 /CHF 3 discharges has been examined as a function of plasma parameters such as pressure, power and relative composition. It is demonstrated that the etching rate initially increases with pressure but decreases after 6.65 Pa.
Congchun Zhang, Chunsheng Yang, Duifu Ding   +2 more
openaire   +1 more source

Deep Reactive Ion Etching of Silicon

MRS Proceedings, 1998
AbstractThe ability to etch deep trenches in silicon while controlling not only the profile of etched features but also the etching rate, uniformity and selectivity enable us to expand the number and scope of MEMS devices. In fact, the increase of MEMS applications in different and varied fields requiring deep silicon etching or high aspect ratio ...
A. A. Ayón, K.-S Chen, K. A. Lohner, S. M. Spearing, H. H. Sawin, M. A. Schmidt   +5 more
openaire   +1 more source

Milestones in deep reactive ion etching

The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., 2005
Deep reactive ion etching (DRIE) has virtually changed MEMS. The basic technology originally developed at Bosch overcomes design restrictions and compatibility problems related to the old wet-etching technology. Today, after a decade of "Bosch DRIE" in the field, a large variety of new MEMS devices is fabricated using this technology, and a broad DRIE ...
F. Laermer, A. Urban
openaire   +1 more source

Ultrahigh Resolution Titanium Deep Reactive Ion Etching

ACS Applied Materials & Interfaces, 2017
Titanium (Ti) represents a promising new material for microelectromechanical systems (MEMS) because of its unique properties. Recently, this has been made possible with the advent of processes that enable deep reactive ion etching (DRIE) of high-aspect-ratio (HAR) structures in bulk Ti substrates.
Bryan W. K. Woo, Shannon C. Gott, Ryan A. Peck, Dong Yan, Mathias W. Rommelfanger, Masaru P. Rao   +5 more
openaire   +2 more sources

Tailoring etch directionality in a deep reactive ion etching tool

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
Silicon deep reactive ion etching is a process that produces projected two-dimensional shapes due to the inability to control the direction of the energetic ions arriving at the surface of a wafer. The resulting etched profiles present sidewalls which are nominally 90° to the wafer surface.
A. A. Ayón, S. Nagle, L. Fréchette, A. Epstein, M. A. Schmidt   +4 more
openaire   +1 more source

Deep reactive ion etch conditioning recipe

SPIE Proceedings, 2004
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation.
Matthew Wasilik, Ning Chen
openaire   +1 more source

Deep reactive ion etching of Pyrex glass

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308), 2002
We have developed a deep reactive ion etching of Pyrex glass in SF/sub 6/ plasma. High etch rate (/spl sim/0.6 /spl mu/m/min) and smooth surface (Ra-4 nm) were achieved at low pressure (0.2 Pa) and high self-bias (-390 V). This result indicates energetic ions for physical sputtering and for enhancing chemical reactions are required to etch materials ...
X. Li, T. Abe, M. Esashi
openaire   +1 more source

Reactive ion etching of deep trenches in silicon

SPIE Proceedings, 1992
We have developed a new production technology of deep trenches RIE with a photoresist mask. RIE was performed in a low-pressure batch diode reactor. Wafers were placed on RF (5,28 MHz) electrode covered by organic lacquer. The maximum loading was 24 wafers having a diameter of 100 mm.
Vladimir N. Bliznetsov, Oleg P. Gutshin, V. Yachmenev   +2 more
openaire   +1 more source