Results 261 to 270 of about 35,175 (290)

Process characterisation of deep reactive ion etching for microfluidic application

International Journal of Nanotechnology, 2018
The goal of this paper is to investigate the influence of parameters of the Bosch deep reactive ion etching (DRIE) process on etched surface profile, sidewall profile and etch rate of micrometre silicon features. By investigating these parameters, we found the conditions to obtain smooth sidewall, high etch rate and balance of chemical and physical ...
Chien Mau Dang, Ngan Nguyen Le, Khanh Kim Huynh, Hue Cam Thi Phan, Dung My Thi Dang, Eric Fribourg Blanc   +5 more
openaire   +1 more source

Challenges, developments and applications of silicon deep reactive ion etching

Microelectronic Engineering, 2003
High etching speed, good uniformity and profile control, high aspect ratio capabilities and reliable notching suppression at dielectric interfaces are key requirements in the industrial application of silicon DRIE processing. An optimized hardware for balanced RF drive at high power levels (3 kW) of the inductive plasma source in combination with ...
F. Laermer, A. Urban
openaire   +1 more source

Characterization of the microloading effect in deep reactive ion etching of silicon

SPIE Proceedings, 2004
Knowledge of the magnitude and characteristic length scales of chip-scale process variations due to varying substrate pattern density is essential if compensation measures, such as incorporation of dummy structures, are to be taken during mask layout.
Soren Jensen, Ole Hansen
openaire   +1 more source

Deep reactive ion etching characteristics of a macromachined chemical reactor

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2003
While deep reactive ion etching using an inductively coupled plasma (ICP) source has proven to be a boon to the fabrication of silicon-based microelectromechanical systems, the process is highly sensitive to the geometry of any given device and needs to be modified accordingly.
R. S. Besser, W. C. Shin
openaire   +1 more source

DEEP REACTIVE ION ETCHING FOR PILLAR TYPE NANOPHOTONIC CRYSTAL

International Journal of Nanoscience, 2005
Experimental results and techniques developed for time multiplexed deep reactive ion etching of nano-photonic crystals are presented. Specifically, the high aspect ratio pillar type two-dimensional photonic crystal (PhC) structure on silicon is fabricated and studied for its high potential in application to lightwave circuits and also for discussion ...
SELIN H. G. TEO, A. Q. LIU, G. L. SIA, C. LU, J. SINGH, M. B. YU   +5 more
openaire   +1 more source

Deep reactive ion etching of through silicon vias

2008
This chapter contains sections titled: • Introduction• DRIE Equipment and Characterization• DRIE Processing• Practical Solutions in Via Etching• Concluding Remarks• Appendix A: Glossary of Abbreviations• Appendix B: Examples of DRIE Recipes ...
Roozeboom, Fred, Blauw, Michiel A., Lamy, Yann, van Grunsven, Eric, Dekkers, Wouter, Verhoeven, Jan F., van den Heuvel, Eric F., van der Drift, Emile, Kessels, Erwin W.M.M., van de Sanden, Richard M.C.M.   +9 more
openaire   +1 more source

Deep Reactive Ion Etched Submicron Beam/Trench Characterization

Micro-Electro-Mechanical Systems (MEMS), 2001
Abstract Sub-micron width high aspect ratio beam/trench arrays are etched into silicon substrates using a Surface Technology Systems (STS) deep reactive ion etch (RIE) tool equipped with a time multiplexed plasma etch/passivation cycle scheme.
Gary O’Brien, Xing Cheng, L. J. Guo
openaire   +1 more source

Deep Reactive Ion Etching

2010
Laermer, Franz, Franssila, Sami, Sainiemi, Lauri, Kolari, Kai   +3 more
openaire   +6 more sources

Analysis of sidewall quality in through-wafer deep reactive-ion etching

Microelectronic Engineering, 2004
W T Pike
exaly   +2 more sources

Superhydrophobic silicon surfaces with micro–nano hierarchical structures via deep reactive ion etching and galvanic etching

Journal of Colloid and Interface Science, 2011
Yang He, WeiZheng Yuan
exaly