Results 251 to 260 of about 35,175 (290)

Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1997
The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6−O2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber.
Bo Asp Mo/ller Andersen, Ole Hansen, Martin Kristensen   +2 more
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Deep reactive ion etching of silicon using an aluminum etching mask

SPIE Proceedings, 2003
A method for fast and efficient deep anisotropic etching of bulk silicon, using a parallel capacitively coupled plasma is presented. The effect of the masking materials and RIE conditions are discussed. Based on the experimental results, a 1000 angstrom thick Al film sufficiently protects the unexposed substrate while allowing the etching of a 350mm ...
null Wei-Chih Wang, J.N. Ho, P. Reinhall
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Investigation of Gaas Deep Etching by Using Reactive Ion Etching Technique

MRS Proceedings, 1991
ABSTRACTRIE is an important technique in obtaining anisotropie etch profile. This is a critical requirement for very deep etching which needs long etch duration. Among many factors which affect RIE characteristics in deep etching, the following are most concerned: (1) the etch mask: needs suitable plasma resistance without significant plasma attack for
Kuen-Sane Din, Gou-Chung Chi
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Diamond Microstructuring by Deep Anisotropic Reactive Ion Etching

physica status solidi (a), 2018
Fabrication of diamond micro‐patterned structures is a technological challenge due to the outstanding hardness and chemical stability of the material. In this work, the synthetic diamond reactive ion etching (RIE) process is studied. The effects of the gas mixture and bias on the diamond etching rate are investigated.
Anton V. Golovanov, Vitaly S. Bormashov, Nikolay V. Luparev, Sergey A. Tarelkin, Sergey Y. Troschiev, Sergei G. Buga, Vladimir D. Blank   +6 more
openaire   +1 more source

Cyclic deep reactive ion etching with mask replenishment

Journal of Micromechanics and Microengineering, 2007
A multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls. This process used repeated cycles of etching and the replenishment of masking layers, similar to the Bosch process (Laermer and Schilp 1996 US Patent 5,498,312) [1] that is employed in ...
T N Adam, S Kim, P-C Lv, G Xuan, S K Ray, R T Troeger, D Prather, J Kolodzey   +7 more
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Deep reactive ion etching for photonic crystals

2021
Photonic crystals are powerful tools to control light by a photonic band gap, analogous to the band gap in semiconductors. A functional class of photonic crystals can be fabricated by etching nanopores in silicon with controlled shape, size and reproducibility. These nanopores are created by deep reactive ion etching.
Goodwin, Melissa Jane, Vos, Willem L., Harteveld, Cornelis A.M.   +2 more
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Formation of deep holes in silicon by reactive ion etching

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1987
Anisotropic etching for the formation of deep holes in the single crystalline silicon has been reported. This technique uses a film deposited on the sidewall to inhibit the lateral etching caused by the bombardment of ions which impinge on the silicon substrate out of the vertical direction.
Kado Hirobe, Ko-ichirou Kawamura, Kazuo Nojiri   +2 more
openaire   +1 more source

Tapered Deep Reactive Ion Etching: Method and Characterization

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007
This work presents a method for etching tapered sidewalls in silicon using deep reactive ion etching. The method is based on consecutive switching between anisotropic etching using the Bosch process and isotropic dry etching. By controlling the etch depths of the anisotropic and isotropic etch sessions, the sidewall angle can be controlled over a ...
Niclas Roxhed, Patrick Griss, Goran Stemme   +2 more
openaire   +1 more source

Aspect ratio dependent etching in advanced deep reactive ion etching of quartz

2017 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2017
Quartz due to its piezoelectricity and its good temperature stability is one of the most used materials in devices for time-frequency applications. Quartz resonators are generally obtained by chemical etching or chemical mechanical polishing but these two methods do not allow the shrinking of the dimensions of the devices and limit reachable geometry ...
P. Chapellier, P. Lavenus, B. Bourgeteau-Verlhac, C. Gageant, O. Le Traon, B. Dulmet   +5 more
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Silicon Germanium as a novel mask for silicon deep reactive ion etching

2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012
This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 1:800).
Serry, Mohamed Y., Rubin, Andrew, Ibrahem, Mohammed Aziz, Sedky, Sherif M.   +3 more
openaire   +2 more sources