Results 91 to 100 of about 2,694 (179)

Formation of Silicon Nanopores and Nanopillars by a Maskless Deep Reactive Ion Etching Process

, 2007
This paper presents a maskless process to create silicon nanopores and nanopillars by inductively coupled plasma deep reactive ion etching (ICP DRIE).
Zhiyong Xiao, Philip C.H. Chan, Hsing, I. Ming, Chan, Philip C.H., Feng, Chunhua, Chunhua Feng, I-Ming Hsing, Xiao, Zhiyong   +7 more
core   +1 more source

Design, Fabrication, and Testing of a SOI-MEMS-Based Active Microprobe for Potential Cellular Force Sensing Applications

Advances in Mechanical Engineering, 2012
This paper presents the design, analysis, fabrication, and characterization of an electrostatically driven single-axis active probing device for the applications of cellular force sensing and materials characterization.
Li Zhang, Jingyan Dong
doaj   +1 more source

Fabrication of micro/nano dual-scale structures by improved deep reactive ion etching

, 2010
We present an integrated micro-and nanofabrication method to create micro/nano dual-scale silicon structures with a controllable sidewall profile over an entire 4 inch wafer.
Gao, Tianle, Tianle Gao, Haixia Zhang, Zhao, Xin, Xin Zhao, Guangyi Sun, Zhang, Haixia, Sun, Guangyi   +7 more
core   +1 more source

Enhanced Vertical Sidewall Quality for Functional AlN Films in 3D Piezo MEMS Applications

Advanced Electronic Materials
Integrating piezoelectric materials onto the vertical surfaces of microelectromechanical systems (MEMS) microstructures enables three‐dimensional piezoelectric (3D piezoMEMS) devices, providing multi‐axis sensing and actuation capabilities with a reduced
Arsam Ali, Glenn Ross, Mervi Paulasto‐Kröckel   +2 more
doaj   +1 more source

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

Sensors, 2015
In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures.
Ha-Duong Ngo, Biswaijit Mukhopadhyay, Oswin Ehrmann, Klaus-Dieter Lang   +3 more
doaj   +1 more source

In-situ measurement of ion angular distribution in bulk titanium DRIE for modeling the etch profile

, 2013
The bulk titanium deep reactive ion etching (DRIE) enabled high aspect ratio structures and devices are promising for harsh and in vivo environments applications.
Jia Hu, Shuwei He, Jing Chen, Hu, Jia, Yiming Zhang, He, Shuwei, Zhang, Yiming, Chen, Jing   +7 more
core   +1 more source

Dependence Of Silicon Fracture Strength And Surface Morphology On Deep Reactive Ion Etching Parameters

, 1998
The development of a high power-density micro-gas turbine engine is currently underway at MIT. The initial goal is to produce the components by deep reactive ion etching (DRIE) single crystal silicon. The capability of the silicon structures to withstand
Kevin A. Lohner, Terran K. Melconian, Arturo A. Ayon, Kuo-Shen Chen, S. Mark Spearing, Mark A. Kepets   +5 more
core   +1 more source

Development and characterization of deep reactive ion etching technology for through silicon interconnection

, 2010
Deep reactive ion etching (DRIE) is an enabling technology for three dimensional (3D) integration of planar integrated circuits. This work focuses on various challenges associated with deep reactive ion etching technology for realizing through silicon ...
Nagarajan, Ranganathan
core   +1 more source

Methods to protect silicon microstructures from the damages in deep reactive ion etching

, 2007
New methods for improving the quality of the silicon deep reactive ion etching (DRIE) procedure were investigated. It suggested that a PECVD oxide layer was deposited at the silicon sidewall and a thermal oxide layer was formed at the silicon backside ...
Tanling Ren, Zhang, Dacheng, Ren, Tanling, Yong Ruan, Ruan, Yong, Litian Liu, Liu, Litian, Dacheng Zhang   +7 more
core   +1 more source

Silicon germanium as a novel mask for silicon deep reactive ion etching

, 2013
This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (
Serry, Mohamed Y., Rubin, Andrew, Sedky, Sherif M., Ibrahem, Mohammed Aziz   +3 more
core   +1 more source