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Ultrathin DUV resists for logic applications
SPIE Proceedings, 2002Ultrathin ESCAP resists have been examined for logic applications in our paper. Lithographic studies have been carried out with these resists at the thickness of 60, 120 and 400 nm for contacts, and at the thickness of 250 vs 400nm for gate layer applications. A clear relationship between optimization of resist profile and film thickness through design
James W. Thackeray +4 more
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High speed diamond DUV-detectors
56th Annual Device Research Conference Digest (Cat. No.98TH8373), 2002Diamond is an ideal material for solar blind DUV-detection below wavelengths of 225 nm. However, only a few experiments have been reported until now, mainly on polycrystalline statistically-oriented diamond films, using interdigitated finger structures (Jackman, 1996). Here, we report on diamond DUV detectors fabricated on highly oriented diamond (HOD)
P. Gluche +5 more
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Phase defects on DUV alternating PSMs
SPIE Proceedings, 2000To extend the life of photo lithography, it has been proceeded the development of the strong PSMs which has no printing phase shifter defects. At PMJ'98, a defect inspection algorithm for phase shifter defects of 60 degrees on i-line multi-phase alternating PSMs was discussed (1) .
Ikuo Yoneda +3 more
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DUV interferometry for micro and nanopatterning
2008 2nd ICTON Mediterranean Winter, 2008In recent years, fabrication of chemical and topographical functional materials in the micrometer and nanometer scales has been drawing a great interest in the scientific community. The attention is not only due to the need for ever-increasing miniaturization of microelectronics for example, but also because of the discovery of many novel phenomena ...
Ridaoui, Hassam +2 more
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High peak power DUV laser processing
High-Power Laser Materials Processing: Applications, Diagnostics, and Systems IX, 2020Deep ultra-violet (DUV) laser and short pulse lasers are used for laser processing, because they can decrease the heat effect for process materials. We are developing a hybrid ArF excimer laser that is consists of a solid-state laser, multi wavelength conversion and ArF excimer amplifier.
Yasuhiro Kamba +13 more
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Thermal Management for DUV LEDs
2019DUV LEDs possess very huge heating issue. On one hand, the sapphire substrate has a poor thermal conductivity, and on the other hand, DUV photons are easily absorbed by the absorptive p-GaN layer and the metal contact in the way of free carrier absorption, which further increases the self-heating effect for DUV LEDs.
Zi-Hui Zhang +3 more
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Dose metrology for DUV lithographic tools
SPIE Proceedings, 2001The semiconductor industry is investigating metrology methods and tools to ensure the high accuracy and stability required for chip making. Lithography equipment manufacturers are under constant pressure to provide in situ measurements that prevent wafer processing form slipping from the established parameters.
Gregory J. Kivenzor, Richard Zimmerman
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Metamaterials for enhancement of DUV lithography
SPIE Proceedings, 2010The unique properties of metamaterials, namely their negative refractive index, permittivity, and permeability, have gained much recent attention. Research into these materials has led to the realization of a host of applications that may be useful to enhance optical nanolithography, such as a high pass pupil filter based on an induced transmission ...
Andrew Estroff +3 more
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Advances in DUV light source sustainability
SPIE Proceedings, 2017Cymer continues to address several areas of sustainability within the semiconductor industry by reducing or eliminating consumption of power and specific types of gas (i.e. neon, helium) required by DUV light sources in order to function. Additionally, Cymer introduced a new recycling technology to reduce the dependence on production of raw gases. In
Yzzer Roman +10 more
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DUV-assisted e-beam resist process
SPIE Proceedings, 2009Electron beam direct writing (EBDW) resist process is slow in throughput but has the highest linewidth resolution among all the lithography techniques. However the e-beam energy is high enough to cut off the polymer chain of DUV chemically amplified resist (CAR) and thus in this paper, DUV-assisted e-beam resist process is studied to increase ...
Wei-Su Chen +2 more
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