Results 31 to 40 of about 767,342 (211)

Electrostatic discharge protection of MiniLED backlight units on glass

open access: yesEnergy Reports, 2021
Active matrix (AM) MiniLED backlight units (BLU) on glass substrate is developed to solve severe problems of MiniLED on PCB including insufficient heat dissipation and worse swelling and shrinking performance, as well as limited zone number. However, the
Juncheng Xiao   +8 more
doaj   +1 more source

TCAD-fitted ESD modelling using equivalent circuit elements

open access: yes, 2018
Electrostatic discharge (ESD) can be considered as one of the main reliability risks of modern electronic systems and causes failure of semiconductor devices by an over current effect.
Scharf, Patrick, Sohrmann, Christoph
core   +1 more source

Probabilistic Electrostatic Discharge Risk Assessment in High-Reliability Electronics Manufacturing

open access: yesIEEE Access
Electrostatic discharge (ESD) remains a reliability threat in high-reliability electronics manufacturing despite industry adoption of ESD standards and control programs.
Matthew T. Thomas, Michael G. Pecht
doaj   +1 more source

Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated Circuits

open access: yesIEEE Journal of the Electron Devices Society, 2021
The integrated circuit (IC) products fabricated in the scaled-down CMOS processes with higher clock rate and lower power supply voltage (VDD) are more sensitive to the transient/switching noises on the power lines with the parasitic inductance induced by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada   +11 more
wiley   +1 more source

Analysis of design strategies for RF ESD problems in CMOS circuits [PDF]

open access: yes, 2007
This thesis analyses the design strategies used to protect RF circuits that are implemented in CMOS technologies. It investigates, in detail, the physical mechanisms involved when a ggNMOS structure is exposed to an ESD event and undergoes snapback.
Pugsley, William
core  

Nonlinear conductive behavior of MoS2/PDMS composites for self-adaptive electrostatic protection

open access: yesPolymer Testing
Electrostatic discharge (ESD) poses a significant threat to electronic components and systems. Self-adaptive electrostatic protection materials (SAEs) are in urgent demand yet still remain a great challenge.
Hongfei Li   +4 more
doaj   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Electrostatic discharge (ESD)–Facts and faults–A review

open access: yesPackaging Technology and Science, 1995
AbstractConcepts of electrostatic discharge (ESD) and how to protect electronic products from ESD are thoroughly discussed. The effect of humidity and temperature on ESD sensitivity, the antistatic properties of various packaging materials and the problems of latent failures are described.
openaire   +3 more sources

An Ultra‐Low‐Power Biopotential Acquisition Analog Front‐End Chip for Wearable Devices

open access: yesInternational Journal of Circuit Theory and Applications, EarlyView.
A 0.8‐V, 1.2‐μW biopotential AFE combines a chopper‐stabilized CCIA with dual‐time‐scale EDO management. The slow DSL preserves > 1 GΩ input impedance, whereas an event‐triggered fast‐recovery path shortens return to the linear range after abrupt electrode‐offset disturbances. ABSTRACT A 0.8‐V, 1.2‐μW biopotential analog front‐end (AFE) IC is presented
Zhang Xin   +4 more
wiley   +1 more source

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