Results 51 to 60 of about 609 (176)

Solubilities of CL‐20 and MDNT in Organic Solvents for Technical Cocrystallization

Propellants, Explosives, Pyrotechnics, Volume 51, Issue 5, Page 761-768, May 2026.
ABSTRACT The 1:1 molar cocrystal of 2,4,6,8,10,12‐hexanitro‐2,4,6,8,10,12‐hexaazaisowurtzitane (CL‐20) and 1‐methyl‐3,5‐dinitro‐1,2,4‐triazole (MDNT) is reported to show a detonation velocity 100 m/s faster than β‐HMX. To establish a scalable synthesis method, the solubility of ε‐CL‐20 and MDNT was investigated.
Eduard Wegert, Peter Schultz, Thomas M. Klapötke   +2 more
wiley   +1 more source

Electrostatic Discharge Current Linear Approach and Circuit Design Method

Energies, 2010
The Electrostatic Discharge phenomenon is a great threat to all electronic devices and ICs. An electric charge passing rapidly from a charged body to another can seriously harm the last one.
Pavlos K. Katsivelis, Georgios P. Fotis, Ioannis F. Gonos, Tryfon G. Koussiouris, Ioannis A. Stathopulos   +4 more
doaj   +1 more source

Monolithic Silicon‐Photonics Sign‐Sign Dot‐Product Circuits Toward Artificial Intelligence and Multiple‐Input Multiple‐Output Accelerators

Nanophotonics, Volume 15, Issue 8, 24 April 2026.
This research leverages advanced monolithic silicon‐photonics integrated‐circuit manufacturing technology with strategic electrical‐to‐optical signal conversions, differential intensity‐modulation technique, and dual rail‐to‐rail photodetection architecture to realize an on‐chip photonic‐electronic sign‐sign dot‐product accelerator achieving 8.92‐Gb/s ...
Sumilak Chaudhury, Karl Johnson, Nikola Alic, Bill Lin, Yeshaiahu Fainman, Tzu‐Chien Hsueh   +5 more
wiley   +1 more source

TFET-Based Voltage Detector: Proposal and Investigation

IEEE Access, 2020
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
doaj   +1 more source

Compositional Tuning of Bilayer Hf1−xZrxO2 for Enhanced Negative Capacitance and Energy Storage Performance

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.
Zr‐rich bilayer Hf1−xZrxO2 capacitors exhibit delayed NC onset, enhanced t‐phase fraction, and improved energy density and efficiency, while compositionally balanced structures enable superior endurance—offering a compositional design route toward high‐performance, fatigue‐resistant NC supercapacitors.
Seungyeon Chang, Sangho Lee, Sanghun Jeon   +2 more
wiley   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Functional Materials for Environmental Energy Harvesting in Smart Agriculture via Triboelectric Nanogenerators

Advanced Functional Materials, Volume 36, Issue 13, 12 February 2026.
This review explores functional and responsive materials for triboelectric nanogenerators (TENGs) in sustainable smart agriculture. It examines how particulate contamination and dirt affect charge transfer and efficiency. Environmental challenges and strategies to enhance durability and responsiveness are outlined, including active functional layers ...
Rafael R. A. Silva, Giulio Fatti, Emanuel Carlos, Guilherme Ferreira, Sumita Goswami, Suman Nandy, Luiz H. C. Mattoso, Elvira Fortunato, Caio G. Otoni, Rodrigo Martins   +9 more
wiley   +1 more source

Fully Integrated GaN-on-Silicon Power-Rail ESD Clamp Circuit Without Transient Leakage Current During Normal Power-on Operation

IEEE Journal of the Electron Devices Society
When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial to safeguard GaN integrated circuits (ICs).
Wei-Cheng Wang, Ming-Dou Ker
doaj   +1 more source

Fluorine‐Free Ionic Liquid Electrolytes Featuring Biomass‐Derived Heterocyclic Anions for Variable Temperature Supercapacitors

Advanced Energy and Sustainability Research, Volume 7, Issue 2, February 2026.
This study introduces two new fluorine‐free ionic liquids (ILs) produced by coupling biomass‐derived heterocyclic anions, i.e., THP and 3‐FuA, with P4444 cation. Both the ILs display enhanced capacitance with increasing temperature, underscoring their potential as fluorine‐free electrolytes for supercapacitors.
Gaurav Tatrari, Sayantika Bhakta, Mukhtiar Ahmed, Solomon Tesfalidet, Faiz Ullah Shah   +4 more
wiley   +1 more source

Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection

IEEE Journal of the Electron Devices Society
Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control.
Chang-Jiun Lai, Ming-Dou Ker
doaj   +1 more source