Results 51 to 60 of about 619 (178)

Organic Thin‐Film Transistors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, Volume 12, Issue 9, 11 May 2026.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy   +2 more
wiley   +1 more source

Electrostatic Discharge Current Linear Approach and Circuit Design Method

open access: yesEnergies, 2010
The Electrostatic Discharge phenomenon is a great threat to all electronic devices and ICs. An electric charge passing rapidly from a charged body to another can seriously harm the last one.
Pavlos K. Katsivelis   +4 more
doaj   +1 more source

Equivalent Experiments Based Prediction Methods for Embedded Software Error due to Electrostatic Discharge [PDF]

open access: yesXibei Gongye Daxue Xuebao, 2018
Electrostatic discharge (ESD) related embedded software error is a critical issue for electronic products and is hard to discover in the early stage of product development.

doaj   +1 more source

Capacitive Pixelated CMOS Electronic Nose

open access: yesAdvanced Electronic Materials, Volume 12, Issue 10, 25 May 2026.
A 1024‐pixel CMOS capacitive E‐nose with inkjet‐printed MOFs and polymer layers yields gas‐specific capacitance fingerprints under humid conditions, discriminating toluene from 2‐butanone at low power. ABSTRACT Although some of the human senses can nowadays be replaced by low‐cost electronic sensors such as microphones and image sensors, a compact low ...
M. A. Basyooni‐M. Kabatas   +7 more
wiley   +1 more source

Binder‐Free NiCo(PO4)3 Nanosheet Electrode for Supercapattery With Enhanced Ion Transport and Long‐Term Stability

open access: yesBattery Energy, Volume 5, Issue 3, May 2026.
Binder‐free NiCo(PO4)3·2H2O nanosheets are directly grown on nickel foam via a scalable hydrothermal route. The hydrated mixed‐metal phosphate enables battery‐type charge storage and, when paired with activated carbon, delivers a high‐performance supercapattery with high energy density and long‐term cycling stability.
Usman Ahmed   +6 more
wiley   +1 more source

Fully Integrated GaN-on-Silicon Power-Rail ESD Clamp Circuit Without Transient Leakage Current During Normal Power-on Operation

open access: yesIEEE Journal of the Electron Devices Society
When more circuit functions are integrated into a single chip fabricated by the GaN-on-Silicon process, the need for on-chip electrostatic discharge (ESD) protection design becomes crucial to safeguard GaN integrated circuits (ICs).
Wei-Cheng Wang, Ming-Dou Ker
doaj   +1 more source

Electro Static Discharge Testing on Meteosat 3rd Generation Photovoltaic Assembly

open access: yesE3S Web of Conferences, 2017
The electrostatic discharge testing on Photovoltaic Assemblies has been thoroughly investigated and performed during the last decade to ensure durability of solar arrays, especially in cases of high power satellites.
Damonte Giulia   +7 more
doaj   +1 more source

Solubilities of CL‐20 and MDNT in Organic Solvents for Technical Cocrystallization

open access: yesPropellants, Explosives, Pyrotechnics, Volume 51, Issue 5, Page 761-768, May 2026.
ABSTRACT The 1:1 molar cocrystal of 2,4,6,8,10,12‐hexanitro‐2,4,6,8,10,12‐hexaazaisowurtzitane (CL‐20) and 1‐methyl‐3,5‐dinitro‐1,2,4‐triazole (MDNT) is reported to show a detonation velocity 100 m/s faster than β‐HMX. To establish a scalable synthesis method, the solubility of ε‐CL‐20 and MDNT was investigated.
Eduard Wegert   +2 more
wiley   +1 more source

Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection

open access: yesIEEE Journal of the Electron Devices Society
Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control.
Chang-Jiun Lai, Ming-Dou Ker
doaj   +1 more source

TFET-Based Voltage Detector: Proposal and Investigation

open access: yesIEEE Access, 2020
In this paper, a tunnel field-effect transistor (TFET)-based voltage detector is proposed and its electrical characteristics are investigated using technology computer-aided design (TCAD) simulation.
Zhaonian Yang, Panqi Gao
doaj   +1 more source

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