Results 61 to 70 of about 619 (178)

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Monolithic Silicon‐Photonics Sign‐Sign Dot‐Product Circuits Toward Artificial Intelligence and Multiple‐Input Multiple‐Output Accelerators

Nanophotonics, Volume 15, Issue 8, 24 April 2026.
This research leverages advanced monolithic silicon‐photonics integrated‐circuit manufacturing technology with strategic electrical‐to‐optical signal conversions, differential intensity‐modulation technique, and dual rail‐to‐rail photodetection architecture to realize an on‐chip photonic‐electronic sign‐sign dot‐product accelerator achieving 8.92‐Gb/s ...
Sumilak Chaudhury, Karl Johnson, Nikola Alic, Bill Lin, Yeshaiahu Fainman, Tzu‐Chien Hsueh   +5 more
wiley   +1 more source

Compositional Tuning of Bilayer Hf1−xZrxO2 for Enhanced Negative Capacitance and Energy Storage Performance

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 3, March 2026.
Zr‐rich bilayer Hf1−xZrxO2 capacitors exhibit delayed NC onset, enhanced t‐phase fraction, and improved energy density and efficiency, while compositionally balanced structures enable superior endurance—offering a compositional design route toward high‐performance, fatigue‐resistant NC supercapacitors.
Seungyeon Chang, Sangho Lee, Sanghun Jeon   +2 more
wiley   +1 more source

ESD GARMENTS [PDF]

Annals of the University of Oradea: Fascicle of Textiles, Leatherwork, 2014
Protective equipment represents an alternative for the sustainable development of companies and for human health protection. The insertion of "invisible functionalities" in textile structures, the use of functional elements as part of the whole garment ...
SCARLAT Răzvan, CĂRPUŞ Eftalea, ENE Alexandra, MIHAI Carmen, VISILEANU Emilia, DONCIU Codrin   +5 more
doaj  

Electrostatic discharge as a breakthrough strategy for triboelectric nanogenerators

Communications Materials
As the Internet of Things (IoT) has expanded, the global energy problem has increased the demand for high-performance self-powered sensors; however, traditional triboelectric nanogenerators (TENGs) are limited by low current outputs and pulsed AC signals.
Seh-Hoon Chung, Sangmin Lee, Jihoon Chung   +2 more
doaj   +1 more source

Interface traps build-up and its influence on electrostatic discharge robustness of high-power metal-oxide-semiconductor field-effect transistor

Российский технологический журнал
Objectives. The aim of the study is to confirm that the robustness of high-power metal–oxide–semiconductor fieldeffect transistor (MOSFET) to electrostatic discharge (ESD) after gamma irradiation is determined by the concentration of built-up interface ...
D. M. Bakerenkova, A. S. Petrov
doaj   +1 more source

Indirect Electrostatic Discharge (ESD) Effects on Shielded Components Installed in MV/LV Substations

Energies
Standards describing the test procedures recommended to investigate the shielding effectiveness of enclosures have two major issues: they generally prescribe the assessment of the electromagnetic field of empty cavities, and they do not deal with very ...
Giuseppe Attolini, Salvatore Celozzi, Erika Stracqualursi   +2 more
doaj   +1 more source

Compact Archimedean spiral antenna with high gain for electrostatic discharge detection

IET Microwaves, Antennas & Propagation
A compact Archimedean spiral antenna with high gain for electrostatic discharge (ESD) detection is investigated. A frustum‐shaped cavity proposed in this work is formed to optimise the maximum antenna gain.
Tong Wang, Dongwei Chen, Mingjie Li, Weidong Liu, Qingyuan Fang   +4 more
doaj   +1 more source

Compact potential sensor for spacecraft based on a silicon photonic waveguide

npj Nanophotonics
Satellites charge up due to incoming electrons and ions, resulting in an electrical potential difference (ΔV) between the satellite and outer space. This can cause electrostatic discharge (ESD) events, damaging electronic devices.
Kosei Otsuka, Wataru Takahama, Rikuto Hojo, Takeki Higashiguchi, Kazuya Kikunaga, Tomofumi Mogami, Kazuhiro Toyoda, Yasushi Takahashi   +7 more
doaj   +1 more source

Temperature dependence of ESD effects on 28 nm FD‐SOI MOSFETs

Engineering Reports
The failure mechanisms caused by electrostatic discharge (ESD) effects at ambient temperatures ranging from −75 to 125°C are investigated by Silvaco TCAD simulator.
Yiping Xiao, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Mingxue Huo   +6 more
doaj   +1 more source