Results 161 to 170 of about 103,571 (282)

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

open access: yesMicromachines (Basel)
Du J   +12 more
europepmc   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

open access: yesphysica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia   +3 more
wiley   +1 more source

Etch rate prediction for iron milling machines [PDF]

open access: yes, 2006
Bohun, C. S.   +3 more
core  

Revealing Intrinsic Functionalization, Structure, and Photo‐Thermal Oxidation in Hexagonal Antimonene

open access: yesSmall, EarlyView.
Cross‐sectional electron microscopy reveals that antimonene hexagons exhibited inner defects and protective organic functionalization against oxidation. Temperature and power‐dependent Raman spectroscopy on varying thicknesses of FLA hexagons show that thinner flakes (<20 nm) exhibited a blueshift and intensity decrease, contrasting with the redshift ...
Marta Alcaraz   +6 more
wiley   +1 more source

Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]

open access: yesMicromachines (Basel)
Drabczyk A   +9 more
europepmc   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

open access: yesSmall, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid   +13 more
wiley   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

open access: yesNat Commun
Xue C   +14 more
europepmc   +1 more source

Nanoscale Ripples at the Surface of SrTiO3 Irradiated by a Broad Low‐Energy Ar+ (7 keV) Ion Beam

open access: yesSmall, EarlyView.
Broad Ar ion beam irradiation creates self‐organized ripple nanostructures on oxide surfaces. A schematic illustrates the process, while cross‐sectional STEM imaging captures the ripple morphology. Complementary elemental mapping by EELS highlights nanoscale chemical variations, linking ion‐beam nanostructuring with structural and compositional ...
Mohammad S. Jamal   +9 more
wiley   +1 more source

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS<sub>2</sub> for scalable 2D electronics. [PDF]

open access: yesNat Commun
Sakuma Y   +18 more
europepmc   +1 more source

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