Results 171 to 180 of about 103,571 (282)
High‐temperature reconstruction of c‐plane sapphire during MOCVD growth of MoS2 fundamentally alters the optical and electronic properties of MoS2 epilayer by introducing step‐edge driven interfacial charge transfer. Raman, PL, and KPFM reveal non‐uniform doping and strain in as‐grown films, whereas transferred layers show uniform optical and ...
Riccardo Torsi +8 more
wiley +1 more source
AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy. [PDF]
Schörmann J +11 more
europepmc +1 more source
Precision Local Strain Engineering in 2D Semiconductors and Their van der Waals Heterostructures
This review highlights recent advances in experimental techniques for mapping and quantifying strain, strategies for imparting programmable local strain via substrate, stressor, and interlayer coupling, and strain‐engineered functionalities in electronics, photonics, and quantum devices.
Byeong Chan Kim +2 more
wiley +1 more source
Contact Transfer Epitaxy of Halide Perovskites. [PDF]
Sun H +8 more
europepmc +1 more source
Wafer‐Scale Self‐Limiting Epitaxy of Bernal‐Stacked Single‐Crystal Boron Nitride
Wafer‐scale, single‐crystal Bernal‐stacked boron nitride (bBN) bilayers are grown by flow‐modulated MOCVD, where monoatomic Ni step edges on Ni(111) deterministically direct AB stacking. As an ultrathin interlayer, bBN suppresses interfacial scattering and enables robust, nonvolatile polarization switching in MoS2 channels, offering a scalable platform
Jaewon Wang +22 more
wiley +1 more source
Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc +1 more source
Hole Polaronic Confinement in (111) Yttria‐Stabilised Zirconia
Ultrathin epitaxial YSZ(111) films unexpectedly develop p‐type mixed conduction and amplified electromechanical coupling under oxidizing conditions. Combined transport measurements and first‐principles modeling reveal that nanoscale confinement and ordered dopant–vacancy complexes stabilize localized O 2p hole polarons at the surface. A canonical ionic
Milica Vasiljevic +15 more
wiley +1 more source
Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]
Sang Y +18 more
europepmc +1 more source
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]
Méndez-Camacho R +2 more
europepmc +1 more source

