Results 171 to 180 of about 138,462 (342)

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Xiaoliang Gong, Tianle Xie, Fan Hu, P.G. Li, Sai Ba, Liancheng Wang, Wenhui Zhu   +6 more
openalex   +1 more source

A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity

Advanced Science, EarlyView.
This study reports a βp$\ubeta^{\text{p}}$ phase of indium selenide showing ferroelectricity over large areas at room temperature in a low‐dimensional limit. It is found that indium selenide films with βp$\ubeta^{\text{p}}$ layers display electric field‐induced switchable polarization characteristic of ferroelectric materials, suggesting the breaking ...
Fabia F. Athena, Cooper A. Voigt, Mengkun Tian, Anjan Goswami, Emily Toph, Moses Nnaji, Fanuel Mammo, Brent K. Wagner, Sungho Jeon, Wenshan Cai, Eric M. Vogel   +10 more
wiley   +1 more source

High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. [PDF]

Micromachines (Basel)
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, Chang Q, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates [PDF]

, 2005
Isao Tamai, Taketomo Sato, Hideki Hasegawa   +2 more
openalex   +1 more source

Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

Advanced Science, EarlyView.
A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states ...
Thanh Huong Vo, Sunjae Kim, Ji‐Hyeon Park, Dae‐Woo Jeon, Wan Sik Hwang, Jinyoung Hwang   +5 more
wiley   +1 more source

Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy. [PDF]

Small Methods
Zhang Q, Hilse M, Law S.
europepmc   +1 more source

Wafer Scale III‐Nitride Deep‐Ultraviolet Vertical‐Cavity Surface‐Emitting Lasers Featuring Nanometer‐Class Control of Cavity Length

Advanced Science, EarlyView.
A DUV‐VCSEL strategy featuring the nanometer‐class control of the cavity length is proposed in the DUV optoelectronic framework based on GaN templates. After the sapphire removal, a self‐terminated etching technology is developed, whereby the cavity length can be accurately determined by epitaxy instead of the fabrication process. As such, a record low
Chen Ji, Jiaming Wang, Fujun Xu, Lisheng Zhang, Jing Lang, Ziyao Zhang, Fuyun Tan, Chengzhi Ji, Junchuan Zhang, Erfei Zhang, Xiangning Kang, Zhixin Qin, Guangxu Ju, Jiejun Wu, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen   +18 more
wiley   +1 more source

Gallium Nitride for Space Photovoltaics: Properties, Synthesis Methods, Device Architectures and Emerging Market Perspectives. [PDF]

Micromachines (Basel)
Drabczyk A, Uss P, Bucka K, Bulowski W, Kasza P, Mazur P, Boguta E, Mazur M, Putynkowski G, Socha RP.   +9 more
europepmc   +1 more source

Emerging of Anomalous Higher‐Order Topological Phases in Altermagnet/Topological Insulator Heterostructure by Floquet Engineering

Advanced Science, EarlyView.
We combine altermagnet with topological insulators and subject the structure to Floquet driving. This breaks time‐reversal symmetry and creates a new type of higher‐order topological insulator. Its key feature is the emergence of programmable “0/π‐corner modes” that can be controlled by magnetic field direction, offering a novel dynamic platform for ...
Donghao Wang, Arnob Kumar Ghosh, Yongchun Tao, Fusheng Ma, Cheng Song   +4 more
wiley   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

Nat Commun
Xue C, Tan C, Gao X, Tang J, Sun W, Yin Y, Wang M, Gao X, An H, Fu B, Liu W, Wang Y, Li Y, Ding F, Peng H.   +14 more
europepmc   +1 more source