Results 191 to 200 of about 103,571 (282)

GaN metal-organic vapor phase epitaxy on Sc₂O₃/Si templates for group III-nitride monolithic integration to Si technology. [PDF]

Sci Rep
Grinys T, Kadys A, Malinauskas T, Lapukas P, Podlipskas Ž, Gudaitis R, Meškinis Š.   +6 more
europepmc   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Growth of rhombohedral-stacked single-crystal WS₂/MoS₂ vertical heterostructures. [PDF]

Nat Commun
Chen J, Guo Y, Zhang Y, Li Z, Guo Q, Yang Q, Li K, Zhang Y, Zhang B, Hu Y, Cai Y, Hu Z, Cheng Q, Liu X, Liu M, Chen J, Yuan Q, Liu K, Xu X.   +18 more
europepmc   +1 more source

Crystallization of Semiconductor Thin Films by Flash Lamp Annealing

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
Flash lamp annealing is a thermal treatment on the millisecond time scale which can be used to crystallize thin semiconductor films. However, crystallization is a complex process showing a broad palette of different features depending on the boundary conditions.
Lars Rebohle, Viktor Begeza, Slawomir Prucnal, Oliver Steuer, René Hübner, Shenqiang Zhou   +5 more
wiley   +1 more source

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond. [PDF]

Nat Commun
Steckler D, Lischke S, Yamamoto Y, Wen WC, Peczek A, Beyer J, Kroh A, Fursenko O, Bärwolf F, Marschmeyer S, Kulse P, Wolansky D, Zimmermann L.   +12 more
europepmc   +1 more source

Surface Reordering During Layer‐by‐Layer Growth on SrTiO3

Advanced Materials, Volume 38, Issue 19, 1 April 2026.
Surface structures (left) derived from DFT‐constrained fitting to crystal truncation rods measured by synchrotron X‐ray scattering (right) after each monolayer of deposition during the MBE growth of SrTiO3${\rm SrTiO}_{3}$ (001). The bottom panel shows the bare substrate, the middle panel shows island formation upon deposition of a single layer of SrO,
I‐Cheng Tung, Xi Yan, June‐Hyuk Lee, Yang Liu, Seo Hyoung Chang, Zhenlin Luo, Friederike Wrobel, Nicholas T. Cheung, Kaden R. Lopez, Michael J. Bedzyk, Hawoong Hong, John W. Freeland, Hua Zhou, Kendra Letchworth‐Weaver, Dillon D. Fong   +14 more
wiley   +1 more source

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

Adv Mater
Tailpied L, Gureghian C, Fossard F, Mérot JS, Rodriguez JB, Flores FG, Vincent G, Taliercio T, Fix B.   +8 more
europepmc   +1 more source

Emerging of Anomalous Higher‐Order Topological Phases in Altermagnet/Topological Insulator Heterostructure by Floquet Engineering

Advanced Science, Volume 13, Issue 19, 2 April 2026.
We combine altermagnet with topological insulators and subject the structure to Floquet driving. This breaks time‐reversal symmetry and creates a new type of higher‐order topological insulator. Its key feature is the emergence of programmable “0/π‐corner modes” that can be controlled by magnetic field direction, offering a novel dynamic platform for ...
Donghao Wang, Arnob Kumar Ghosh, Yongchun Tao, Fusheng Ma, Cheng Song   +4 more
wiley   +1 more source