Results 191 to 200 of about 18,262 (225)

Microfabrication for Si wafers by FAB etching

Applied Surface Science, 1993
Abstract Fast atom beam (FAB) etching is useful for microfabrication of insulators or composite materials with metals and semiconductors because of the electric neutral property. The FAB source for a large diameter of (8 inch) FAB has been developed and the characteristics have been studied by spectroscopic and other methods.
T. Nishimura, H. Suzuki, T. Satake
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Microfabrication of Glassy Carbon by Electrochemical Etching

Journal of The Electrochemical Society, 2004
Due to the broad impact of microfabrication technology on chemistry and biology, new methods to pattern and etch a variety of materials are being explored in a number of laboratories. We have developed a method for the etching of glassy carbon (GC) that opens pathways for the creation of new electrode patterns and devices.
Gregory K. Kiema, Solomon Ssenyange, Mark T. McDermott   +2 more
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Laser-assisted wet chemical etching of metals for microfabrication

SPIE Proceedings, 1994
Laser-induced wet chemical etching of Co, Cr, Cu and Ti in aqueous solutions of potassium hydroxide and phosphoric acid was investigated using an Ar-laser operating at 514 nm. Etching of thin metal films on glass substrates and metal foils was obtained at static etch rates up to about 10 micrometers /s at an incident laser power of about 1 W.
Rainer Nowak, Simeon Metev, Gerd Sepold
openaire   +1 more source

Microfabrication of Thermoelectric Hydrogen Sensor Using KOH Solution Etching

Key Engineering Materials, 2006
Micromachined sensors are a new generation of sensor technology combining existing integrated circuit fabrication technology with novel deposition and etching processing. In the viewpoint of low-power operation, high sensitivity and fast response speed of thermoelectric hydrogen sensor (THS), we prepared the micromachined thermoelectric hydrogen sensor
Kazuki Tajima, Yeong Soo Choi, Woosuck Shin, Noriya Izu, Ichiro Matsubara, Norimitsu Murayama   +5 more
openaire   +1 more source

Microfabrication of diamond films: selective deposition and etching

Surface and Coatings Technology, 1991
Abstract For the future application of diamond films to microelectronic devices and sensors, it is necessary to develop methods for making patterns a few micrometers wide of diamond films on substrates. To this end, two different methods of selected-area deposition were developed: reactive-ion etching and amorphous silicon masking of silicon ...
S. Miyauchi, K. Kumagai, K. Miyata, K. Nishimura, K. Kobashi, A. Nakaue, Jeffrey T. Glass, Ian M. Buckley-Golder   +7 more
openaire   +1 more source

Reactive ion etching of quartz and glasses for microfabrication

SPIE Proceedings, 1999
The reactive ion etching (RIE) of quartz and of silica-based glasses (Suprasil 2, Herasil 2, BK7, LE, NA and soda-lime) has been examined in CF 4 /CHF 3 plasmas. The etch rate was shown to reduce strongly with an increasing percentage of non-volatile elements in the glass.
Patrick W. Leech, Geoffrey K. Reeves
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Lithography and Reactive Ion Etching in Microfabrication

1995
The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
openaire   +1 more source

Microfabrication of Magnetic Tunnel Junctions Using CH$_{3}$OH Etching

IEEE Transactions on Magnetics, 2007
The 100-nm-scale CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) were fabricated using a CH3OH etching process. These MTJs have steep side walls and show clear MR loops. The distributions of magnetic properties of CH3OH etched MTJs were smaller than those of conventional Ar ion etched ...
Y. Otani, H. Kubota, A. Fukushima, H. Maehara, T. Osada, S. Yuasa, K. Ando   +6 more
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Gas-assisted focused ion beam etching for microfabrication and inspection

Microelectronic Engineering, 1990
Abstract A focused ion beam system has been applied to the etching of semiconductor materials. The etching can be carried out by sputtering with the ion beam alone or by a combination of the ion beam and a reactive gas, in this case chlorine. The flexibility of the system allows beam currents from 5.10 -7 to 5.10 -12 A to be used, with a typical ...
R.J. Young, J.R.A. Cleaver, H. Ahmed
openaire   +1 more source

The pickup of ion beam etching depth information during microfabrication

SPIE Proceedings, 2003
Based on scalar quantity diffraction theory, the phase grating of micro-optics structure is studied. The light intensity distribution of diffraction fields is obtained. Results show that the peak position of light intensity moved with the variation of ion beam etching depth.
Guangxing Zhao, Yan Wang
openaire   +1 more source