Direct Triboelectric Programming of a Ferroelectric Synaptic Transistor for Neuromorphic Tactile Perception. [PDF]
Lee I, Jung J, Lee Y, Lee S.
europepmc +1 more source
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong +9 more
wiley +1 more source
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors. [PDF]
Das A +14 more
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Straintronics and Twistronics in 2D Materials: Structural Control and Predictive Design
Strain and twist engineering in 2D materials is established as a programmable design parameter responsible for reconstructing lattices, tuning interlayer coupling, and developing new quantum functionalities. Through the integration of advanced fabrication techniques, multiscale characterization, computational modeling, and machine learning, this review
Manoj Tripathi +14 more
wiley +1 more source
Impact of ferroelectric polarization dynamics on thermal reliability in Ferro-FinFETs. [PDF]
Ma W +8 more
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Mesophase Tunable Actuation of Ionic Thiol‐Acrylate Liquid Crystal Elastomers
Thiol‐acrylate ionic liquid crystal elastomers (iLCE) are developed with nematic and cybotactic mesophases and polydomain and monodomain genesis. The effect of genesis, mesophase, and microstructure on electroactuation was studied. ABSTRACT Electroactive polymers (EAPs) are envisioned to play a crucial role in next‐generation soft robotics for their ...
Yasaman Maddah +7 more
wiley +1 more source
Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory. [PDF]
Li M +18 more
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Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao +4 more
wiley +1 more source
Unified Steep-Slope Switching and Non-Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor. [PDF]
Lee S +5 more
europepmc +1 more source
Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors. [PDF]
Seok H, Kim G, Son S, Choi H, Kim T.
europepmc +1 more source

