Results 201 to 210 of about 15,745,352 (243)

Time-Domain Simulation and Optimization of the Memory Window for HZO-Based FeFETs Using the NLS Model. [PDF]

Micromachines (Basel)
Han S, Lü W, Liang Y, Dai T.
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source

Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design. [PDF]

Nat Commun
Huang T, Yang G, Sang Y, Zhuo F, Liu M, Li G, Cheng H, Yu Z, Fu Z, Liu S, Shen H, Yu Z, Liu B, Wang X, Wu W, Shi R, Zhuang Z, Sun W.   +17 more
europepmc   +1 more source

MoS2/Graphene Floating‐Gate Transistor Toward Non‐Volatile Memory and High‐Precision Synaptic Operations

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
The synaptic behavior of MoS2/graphene floating‐gate structures is shown. A subthreshold slope of 25 mV/decade, a high current ON/OFF ratio of 1010$^{10}$ with sub‐nanowatt power consumption are achieved. The programming–erasing time is approximately 11 ns, a memory window of 5.9 V, and a projected 10‐year retention of 91%.
Md. Ibrahim Ahmed, Sharnali Islam
wiley   +1 more source

Recent Advances and Perspectives on Field-Effect Transistors for Artificial Visual Neuromorphic Systems. [PDF]

Adv Sci (Weinh)
Yaqian L, Menghua L, Yihang X, Manyu Z, Chunkang L, Xiaozhou L, Yi D, Lingli W, Liying J, Yuanyuan H, Huipeng C, Lang J.   +11 more
europepmc   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Emerging Multimodal Artificial Sensory Fusion Paradigms Toward Advanced Embodied Intelligence. [PDF]

Adv Mater
Guo Y, Huang Y, Zhao X, Chen H, Li H, Li Y, Zhai T.   +6 more
europepmc   +1 more source

TWIN: Ternary Weight and Input Neural Network Accelerators Using an Experimentally Informed Ferroelectric Carbon Nanotube FET Compact Model

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ferroelectric HZO thin films enable negative differential resistance in calibrated FeCNTFET models, creating stable ternary switching states for compact multi‐valued logic. The resulting device‐to‐architecture framework demonstrates efficient ternary neural‐network accelerators with substantial area and power savings, highlighting ferroelectric CNT ...
Mohammad Khaleqi Qaleh Jooq, Abdolah Amirany, Martin F. Sarott, Beatriz Noheda, Johanna van Gent González, Kian Jafari, Elham Heidari, Mostafa Rahimi Azghadi, Hamed Dalir, Saeed Afshar   +9 more
wiley   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Celestial neuromorphics based on ferroelectric gallium oxide. [PDF]

Natl Sci Rev
Xu K, Guan Z, Pei M, Luo Y, Zhu Y, Yu X, Hao L, Gu S, Yao J, Li Z, Pei X, Zhang Y, Wang H, Wan C, Wan Q, Zhang R, Ye J.   +16 more
europepmc   +1 more source