Results 191 to 200 of about 15,745,352 (243)

Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. [PDF]

Nat Commun
Duong NT, Krishna S, Nguyen MC, Kim HS, Lam VT, Gul HZ, Choi SH, Kim M, Lee D, Tran TU, Dat VK, Do VD, Hoang VH, Rho H, Kim YM, Yu WJ, Kim KK, Lim SC.   +17 more
europepmc   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, Volume 11, Issue 18, 18 September 2026.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

A ferroelectric-ionic-trapping transistor for low power and secure neuromorphic computing. [PDF]

Nat Commun
Han C, Cho Y, Kim D, Hwang SH, Song M, Kwak B, Radermacher D, Kang MW, Kim S, Kim J, Shin W, Kwon D.   +11 more
europepmc   +1 more source

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

Advanced Materials Technologies, Volume 11, Issue 18, 18 September 2026.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

Two-Dimensional Indium Selenide for Next-Generation Electronics. [PDF]

Int J Mol Sci
Lee D.
europepmc   +1 more source

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

Advanced Science, Volume 13, Issue 49, 3 September 2026.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan, Xuefeng Hu, Ming Zhou, Weiwei Qing, Along Li, Zilong Wang, Mudan Feng, Shuang Zhao, Xiaoliang Wang, Peipei Li, Yali Bi, Wei Zhang   +11 more
wiley   +1 more source

Piezo‐Coupling Effects in Smart Polymers: Toward Ultrasensitive Sensing and Biomedical Applications

Advanced Science, Volume 13, Issue 51, 14 September 2026.
Piezo‐coupling effects are the foundational factors for the development of multifunctional and self‐powered platforms. Central to this advancement is the use of stimuli‐responsive smart polymers, which offer mechanical flexibility, biocompatibility, and simplified structural complexity with improved sensitivity and energy efficiency.
Duc Khanh Tran, Tuan Sang Tran, Thanh‐An Truong, Trung‐Hieu Vu, That Buu Ton, Dzung Viet Dao, Van Thanh Dau   +6 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Ferroelectric Transistors: from Materials Innovation to Intelligent Electronic Systems. [PDF]

Adv Mater
Li E, Wang W, Liu Y, Wang R, Luo C, Zhou H, Chen S, Chen S, Xie Z, Zhu K, Li W, Chu J.   +11 more
europepmc   +1 more source