Results 51 to 60 of about 2,109,434 (243)
Photonics, 2020 In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported
U. Zavala-Moran +7 more
doaj +1 more source
IEEE Journal of Quantum Electronics, 2019 In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate.
Zhuo Deng +5 more
semanticscholar +1 more source
Nano-porosity in GaSb induced by swift heavy ion irradiation [PDF]
, 2016 Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime.
Afra, B +12 more
core +1 more source
INFLUENCE OF THE SUBSTRATE TEMPERATURE ON OPTICAL AND STRUCTURAL PROPERTIES OF GaSb:Ni ALLOYS
Momento, 2018 GaSb:Ni ternary alloys thin films were deposited via sputtering method (DC magnetron Co{Sputtering) varying the substrate temperature (Ts). From spectra transmittance measurements and X-ray diffraction (XRD) were obtained the optical constants and ...
Heiddy P. Quiroz, Anderson Dussan
doaj +1 more source
Infrared physics & technology, 2019 We report on the development of InAs/GaSb type-II superlattice infrared photodetectors for operation under temperatures reachable with thermoelectric cooling.
R. Müller +8 more
semanticscholar +1 more source
X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface [PDF]
, 1993 X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction.
Collins, D. A. +3 more
core +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Avalanche Photodetector Based on InAs/InSb Superlattice
Quantum Reports, 2020 This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate.
Arash Dehzangi +3 more
doaj +1 more source
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon
Advanced Electronic Materials, 2022 ULTRARAM is a nonvolatile memory with the potential to achieve fast, ultralow‐energy electron storage in a floating gate accessed through a triple‐barrier resonant tunneling heterostructure.
Peter D. Hodgson +5 more
doaj +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source