Results 51 to 60 of about 6,152 (186)
Avalanche Photodetector Based on InAs/InSb Superlattice
Quantum Reports, 2020 This work demonstrates a mid-wavelength infrared InAs/InSb superlattice avalanche photodiode (APD). The superlattice APD structure was grown by molecular beam epitaxy on GaSb substrate.
Arash Dehzangi +3 more
doaj +1 more source
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
, 2005 We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other.
Pistol, M. -E., Pryor, C. E.
core +1 more source
Mid‐Infrared Integrated Photonics: Material Platforms and Emerging Applications
Laser &Photonics Reviews, EarlyView.Mid‐infrared (MIR) integrated photonics enables advanced chemical and biological sensing through the unique absorption features of molecules in the 2–20 µm range. This review highlights recent material advances such as chalcogenide glasses, silicon, and graphene and explores MIR applications in environmental monitoring, medical diagnostics ...
Muhammad Ali Butt +2 more
wiley +1 more source
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
doaj +1 more source
Correlated X‐Ray and Electron Microscopies of a Single Biphasic GaAs Nanowire
Small Methods, Volume 10, Issue 3, 9 February 2026.Nano‐focused scanning X‐ray diffraction microscopy at a synchrotron light source, combined with transmission electron microscopy, reveals a clear correlation between the nanoscale distribution of cubic and hexagonal segments in a GaAs nanowire with subtle variations in inter‐reticular spacing, bending, and twisting.
Thomas Dursap +14 more
wiley +1 more source
New Journal of Physics, 2021 Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non ...
Petr Steindl +4 more
doaj +1 more source
Thermal conductivity of InAs/GaSb superlattice
, 2011 The cross-plane thermal conductivity of a type II InAs/GaSb superlattice (T2SL) is measured from 13 K to 300 K using the 3{\omega} method. Thermal conductivity is reduced by up to 2 orders of magnitude relative to the GaSb bulk substrate. The low thermal
Grayson, M. +3 more
core +1 more source
Advanced Materials, Volume 38, Issue 3, 13 January 2026.A monolithic multi‐band LED capable of simultaneously emitting short‐ and mid‐wavelength infrared light is demonstrated, enabled by Sb doping–driven strain engineering that achieves balanced strain compensation and coherent epitaxy in the quantum wells.
Hee Joon Jung +12 more
wiley +1 more source
AIP Advances, 2020 A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated.
Donghai Wu +3 more
doaj +1 more source
Advanced Materials Technologies, Volume 11, Issue 1, 8 January 2026.Scaling of 3D‐integrated electronics exacerbates thermal bottlenecks, motivating solid‐state on‐chip cooling beyond convection and immersion. This perspective reviews optical refrigeration, electroluminescent cooling, and thermoelectrics for localized, vibration‐free heat removal.
Huilong Liu +2 more
wiley +1 more source