Results 161 to 170 of about 1,279 (182)

Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications

2022 8th International Conference on Signal Processing and Communication (ICSC), 2022
Bhavya Kumar, Megha Sharma, Rishu Chaujar   +2 more
openaire   +1 more source

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology

2024 IEEE International Reliability Physics Symposium (IRPS)
Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae   +6 more
openaire   +2 more sources

A New T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET With Enhanced Subthreshold Analog/RF Performance for Low Power Applications

Solid-State Electronics, 2014
Mridula Gupta, Subhasis Haldar, R S Gupta   +2 more
exaly  

Design and Analysis of Si-Based Arch-Shaped Gate-All-Around (GAA) Tunneling Field-Effect Transistor (TFET)

Current Applied Physics, 2015
Seongjae Cho, Young Jun Yoon, Jung-Hee Lee   +2 more
exaly  

A Comparative Investigation of SiGe Junctionless Triple Gate (JLTG) and Junctionless Gate-All-Around (JL-GAA) MOSFET

2021
Abhinav Gupta, Vikrant Varshney, Adarsh Vishwakarma, Arunabh Kishore, Atul Pal, Piyush Mishra, Varnika Pathak, Ziya ur Rahman   +7 more
openaire   +1 more source

Analytical Modeling for 3D Potential Distribution of Rectangular Gate (RecG) Gate-All-Around (GAA) MOSFET in Subthreshold and Strong Inversion Regions

Microelectronics Journal, 2012
Santosh Kumar Vishvakarma
exaly  

Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si_(0.55)Ge_(0.45) GAA-Cylindrical NWTFET for Ambipolar Analysis

IEEE Transactions on Electron Devices, 2019
Naveen Kumar, Naveen Kumar, Ashish Raman
exaly  

Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well

Microelectronics Journal
Qingkun Li, Qingzhu Zhang, Lei Cao, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu   +9 more
openaire   +2 more sources

The Effect of Gate Stack and High-ĸ Spacer on Device Performance of a Junctionless GAA FinFET

2020
Rishu Chaujar, Bhavya Kumar
exaly  

Impact of Gate Material Engineering(GME) on Analog/RF Performance of Nanowire Schottky-Barrier Gate All Around (GAA) MOSFET for Low Power Wireless Applications: 3D T-CAD Simulation

Microelectronics Journal, 2014
Manoj Kumar, Mridula Gupta, Subhasis Haldar   +2 more
exaly