Results 161 to 170 of about 1,221 (182)

A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs

Silicon, 2021
, Nitish Kumar, Himanshi Awasthi
exaly  

Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications

2022 8th International Conference on Signal Processing and Communication (ICSC), 2022
Bhavya Kumar, Megha Sharma, Rishu Chaujar   +2 more
openaire   +1 more source

Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) Technology

2024 IEEE International Reliability Physics Symposium (IRPS)
Taiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae   +6 more
openaire   +1 more source

A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications

Solid-State Electronics, 2014
Mridula Gupta, Subhasis Haldar, R S Gupta   +2 more
exaly  

Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET

International Journal of Electronics Letters, 2020
Farooq Khanday, Aadil Shora
exaly  

Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

Current Applied Physics, 2015
Seongjae Cho, Young Jun Yoon, Jung-Hee Lee   +2 more
exaly  

Small Signal Analysis of Stacked Gate GAA FinFET at THz Frequency for RF and Microwave Applications

2022
Rishu Chaujar, Bhavya Kumar
exaly  

A Comparative Investigation of SiGe Junctionless Triple Gate (JLTG) and Junctionless Gate-All-Around (JL-GAA) MOSFET

2021
Abhinav Gupta, Vikrant Varshney, Adarsh Vishwakarma, Arunabh Kishore, Atul Pal, Piyush Mishra, Varnika Pathak, Ziya ur Rahman   +7 more
openaire   +1 more source

Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

Microelectronics Journal, 2012
Santosh Kumar Vishvakarma
exaly  

Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation

Microelectronics Journal, 2014
Manoj Kumar, Mridula Gupta, Subhasis Haldar   +2 more
exaly