Results 141 to 150 of about 445 (155)

Low GIDL and Its Physical Origins in Si Nanowire Transistors

Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, 2010
K. Zaitsu, M. Saitoh, Y. Nakabayashi, T. Ishihara, T. Numata   +4 more
openaire   +1 more source

Impact of Process-Induced Inclined Sidewalls on Gate-Induced Drain Leakage (GIDL) Current of Nanowire GAA MOSFETs

IEEE Transactions on Electron Devices, 2022
Ashraf Maniyar, P S T N Srinivas, Pramod Kumar Tiwari   +2 more
exaly  

Improvement in Junction Breakdown and GIDL using MFLA in DRAM Product

Journal of The Electrochemical Society, 2011
Shian-Jyh Lin, Chao-Sung Lai, Sheng-Tsung Chen, Yi-Jung Chan, Ruey-Dar Chang, Wei Chih. Wang, Brady Huang, Neng-Tai Shih, Graham Chuang, Chung-Yuan Lee, Pei-Ing Lee   +10 more
openaire   +1 more source

Impact of Hydrogen Anneal on Peripheral PMOS NBTI and Array Transistor GIDL in DRAM

2021 IEEE 14th International Conference on ASIC (ASICON), 2021
Xiong Li, Huangxia Zhu, Xiaolin Guo, Kejun Mu, Peng Feng, Qi-An Xu, Blacksmith Wu, Kanyu Cao   +7 more
openaire   +1 more source

Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs

2012
link_to_subscribed_fulltext
Xu, Jingping, Lai, PT
openaire   +1 more source

Investigation and Compact Modeling of the Time Dynamics of the GIDL-Assisted Increase of the String Potential in 3-D NAND Flash Arrays

IEEE Transactions on Electron Devices, 2018
Gerardo Malavena, Andrea L Lacaita, Alessandro S Spinelli   +2 more
exaly  

GIDL analysis of the process variation effect in gate-all-around nanowire FET

Solid-State Electronics, 2018
Myounggon Kang, Hyungcheol Shin
exaly  

Dependence on an oxide trap’s location of random telegraph noise (RTN) in GIDL current of n-MOSFET

Solid-State Electronics, 2014
Hyungcheol Shin
exaly  

An Experimental Evaluation of Fin Width and Low-Temperature Influence on GIDL in Stacked SOI Nanowires

2022
Michelly De Souza, M Casse, Sylvain Barraud   +2 more
exaly  

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

IEEE Transactions on Electron Devices, 2006
Tetsu Tanaka
exaly