Results 121 to 130 of about 347 (149)
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An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET
IEEE Transactions on Electron Devices, 2001An analytic three-terminal band-to-band tunneling current model for the gate-induced drain leakage current (GIDL) in an n-MOSFET is developed. This model considers impurity doping concentration, vertical field, lateral field, and so-induced electron momentum enhancement, as well as the surface electro-static potential in the gate-to-drain overlapped ...
null Ja-Hao Chen +2 more
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Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation
2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2012This paper investigates the temperature influence on Ultra Thin Buried Oxide (UTBOX) FDSOI devices used as a 1T-DRAM (single transistor dynamic random access memory cell) using GIDL (Gate Induced Drain Leakage) for writing operation through numerical simulations.
K. R. A. Sasaki +5 more
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Solving the GIDL problem with nanowire transistor
AIP Conference Proceedings, 2023openaire +1 more source
Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023Ho-Nam Yoo +4 more
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Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
2014Session 16: no.
Huang, MQ, Ma, ZJ, Lai, PT, Cheng, YC
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Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND
2023 IEEE International Memory Workshop (IMW), 2023Suhwan Lim +13 more
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GIDL Currents in MOSFETs with High-k Dielectric
Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001Sung-il Chang +2 more
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GIDL Analysis of 1T1C Structure for Sub-20nm DRAM Cell
2022 IEEE 16th International Conference on Anti-counterfeiting, Security, and Identification (ASID), 2022Yalin Zheng +3 more
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Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory
Electronics (Switzerland), 2022Myounggon Kang
exaly
Assessment of GIDL Reduction and Vth Modulation with Plasma Doped FinFETs
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, 2015J. M. Lee +5 more
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