Results 121 to 130 of about 354 (151)

Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2012
This paper investigates the temperature influence on Ultra Thin Buried Oxide (UTBOX) FDSOI devices used as a 1T-DRAM (single transistor dynamic random access memory cell) using GIDL (Gate Induced Drain Leakage) for writing operation through numerical simulations.
K. R. A. Sasaki, L. M. Almeida, J A. Martino, M. Aoulaiche, E. Simoen, C. Claeys   +5 more
openaire   +1 more source

MOSFET GIDL Current Variation with Impurity Doping Concentration – A Novel Approach

2019 International Conference on Power Electronics, Control and Automation (ICPECA), 2019
This paper depicts the actual variation of gate-induced-drain-leakage current with impurity doping concentration by complete qualitative and quantitative approach. De Casteljau’s algorithm is applied to describe the band-to-band tunneling in a thin gate oxide n-MOSFET and the results are remarkably matched.
Arnesh Sen, Aishik Das, Jayoti Das
openaire   +1 more source

Comparison of -MOSFET lifetime estimates based on GIDL enhancement and transconductance degradation as criteria

Solid-State Electronics, 1992
Abstract A comparison of MOSFET lifetimes based on gate-induced drain leakage (GIDL) enhancement and transconductance degradation as criteria is presented. Analysis of damage mechanisms indicates that degradations related to interface state generation limit the MOSFET lifetime at reduced voltage operations.
A.B. Joshi, D.L. Kwong
openaire   +1 more source

Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's

2014
Session 16: no.
Huang, MQ, Ma, ZJ, Lai, PT, Cheng, YC
openaire   +1 more source

Solving the GIDL problem with nanowire transistor

AIP Conference Proceedings, 2023
openaire   +1 more source

Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023
Ho-Nam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jong-Ho Lee   +4 more
openaire   +1 more source

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND

2023 IEEE International Memory Workshop (IMW), 2023
Suhwan Lim, Samki Kim, Changhee Lee, Hyeongwon Choi, Nambin Kim, Jaehun Jung, Hanvit Yang, Tae-Hun Kim, Junhee Lim, Daewon Ha, Sunghoi Hur, Jae-hoon Jang, Yu-Gyun Shin, Jaihyuk Song   +13 more
openaire   +1 more source

GIDL Currents in MOSFETs with High-k Dielectric

Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001
Sung-il Chang, Jongho Lee, Hyungcheol Shin   +2 more
openaire   +1 more source

GIDL Analysis of 1T1C Structure for Sub-20nm DRAM Cell

2022 IEEE 16th International Conference on Anti-counterfeiting, Security, and Identification (ASID), 2022
Yalin Zheng, Danfeng Chen, Shan He, Donghui Guo   +3 more
openaire   +1 more source

Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory

Electronics (Switzerland), 2022
Myounggon Kang
exaly