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An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

IEEE Transactions on Electron Devices, 2001
An analytic three-terminal band-to-band tunneling current model for the gate-induced drain leakage current (GIDL) in an n-MOSFET is developed. This model considers impurity doping concentration, vertical field, lateral field, and so-induced electron momentum enhancement, as well as the surface electro-static potential in the gate-to-drain overlapped ...
null Ja-Hao Chen   +2 more
openaire   +1 more source

Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2012
This paper investigates the temperature influence on Ultra Thin Buried Oxide (UTBOX) FDSOI devices used as a 1T-DRAM (single transistor dynamic random access memory cell) using GIDL (Gate Induced Drain Leakage) for writing operation through numerical simulations.
K. R. A. Sasaki   +5 more
openaire   +1 more source

Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2023
Ho-Nam Yoo   +4 more
openaire   +1 more source

Improvement of GIDL-assisted Erase by using Surrounded BL PAD Structure for VNAND

2023 IEEE International Memory Workshop (IMW), 2023
Suhwan Lim   +13 more
openaire   +1 more source

GIDL Currents in MOSFETs with High-k Dielectric

Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, 2001
Sung-il Chang   +2 more
openaire   +1 more source

GIDL Analysis of 1T1C Structure for Sub-20nm DRAM Cell

2022 IEEE 16th International Conference on Anti-counterfeiting, Security, and Identification (ASID), 2022
Yalin Zheng   +3 more
openaire   +1 more source

Assessment of GIDL Reduction and Vth Modulation with Plasma Doped FinFETs

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, 2015
J. M. Lee   +5 more
openaire   +1 more source

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