Results 101 to 110 of about 347 (149)
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Compact Model for Trap Assisted Tunneling based GIDL
2022 Device Research Conference (DRC), 2022Sayeef Salahuddin +2 more
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Decoupled tunneling and GIDL effects for 28nm high-k stacked nMOSFETs
2017 6th International Symposium on Next Generation Electronics (ISNE), 2017One interesting result for 28nm high-k stacked n-channel MOSFET with W/L= 0.5/0.12 (μm/μm) electrically sensed demonstrates the tunneling and GIDL effects which can effectively be decoupled by gate bias at accumulation mode. Due to the drain bias assisted, the decoupling performance in this work is more apparent.
Mu-Chun Wang, Shea-Jue Wang
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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
IEEE Transactions on Electron Devices, 2022Anastasiia Kruv +2 more
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Investigation of the characteristics of GIDL current in 90nm CMOS technology
Chinese Physics, 2006A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias VD has a strong effect on GIDL current as compared with the gate bias VG at the same drain–gate voltage VDG.
Chen Hai-Feng +7 more
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Effects of X-ray irradiation on GIDL in MOSFETs
IEEE Electron Device Letters, 1992The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL.
A. Acovic +4 more
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PMOSFET anti-fuse using GIDL-induced-HEIP mechanism
Microelectronics Reliability, 2010Abstract We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg = high, Vd = low).
J. Y. Seo +5 more
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Approximations to field-effect factor and their use in GIDL modeling
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the ...
Nikita Kozhukhov +2 more
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A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET
2019 International Semiconductor Conference (CAS), 2019This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET ...
A. Sen, J. Das
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GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications
IEEE Electron Device Letters, 2013Investigation of gate-induced drain leakage (GIDL) in thick-oxide dual-gate doped- and undoped-channel FinFET devices through 3-D process and device simulations is presented. For a given gate length (LG) and gate dielectric thickness, the placement and grading of the drain junction and the channel doping are shown to have a tremendous impact on GIDL ...
Pranita Kerber +3 more
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Analysis of GIDL Dependence on STI-induced Mechanical Stress
2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2006The mechanical stress induced by shallow trench isolation (STI) signifilcantly affects the device behavior in the advanced CMOS technology. This paper presents an STI-dependent gate-induced drain leakage (GIDL) model and investigates the physical mechanisms in this phenomenon.
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