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Study of GIDL Improvement for 2T-SONOS Flash
2020 China Semiconductor Technology International Conference (CSTIC), 2020The improvement of Gate induced drain leakage (GIDL) is studied in 2T SONOS (silicon-oxide-nitride-oxide-silicon) nonvolatile memory. High GIDL current from the select gate (SG) introduce inhibit disturb to the neighbor SONOS gate. It is found that these leakage bits impact the overall yield and reliability.
Zhenghong Liu +6 more
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HCD-Induced GIDL Increase and Circuit Implications
2019 IEEE 25th International Symposium on On-Line Testing and Robust System Design (IOLTS), 2019In this paper we review the physics of gate-induced drain leakage (GIDL) increase due to hot carrier degradation (HCD) and the proposed modelling for reliability simulations. A case study of an analog circuit where this phenomenon leads to an overall increase of static power consumption over time is shown.
Edoardo Ceccarelli +4 more
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Improved extraction of GIDL in FDSOI devices for proper junction quality analysis
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011 In this work, an optimized method to extract GIDL parameters has been used to characterize junction quality in FDSOI devices. This paper gives a practical methodology to properly apply this method: first, it insists on the importance to discriminate the respective contributions of GIDL and gate tunneling in drain current.
Xu, C. +11 more
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Greatly suppressed stress-induced shift of GIDL in N2O-based n-MOSFET's
Solid-State Electronics, 1998 Abstract Considerably suppressed gate-induced drain leakage (GIDL) shifts of N 2 O-based n-MOSFET's after hot-carrier stress with different gate voltages are observed. The mechanisms involved are studied by dividing gate-oxide traps into sub-interface and bulk-oxide traps, and by means of computer simulations on electric-field distribution and ...
Huang, L +4 more
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Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress
Microelectronics Reliability, 2014Abstract The Gate-Induced-Drain-Leakage (GIDL) current in Tri-gate MOSFETs for different crystal orientations and fin widths under hot carrier stress was systematically examined by comparing the experiments and a theoretical GIDL current model.
Jong Tae Park
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Compact Model for Trap Assisted Tunneling based GIDL
2022 Device Research Conference (DRC), 2022Chetan Kumar Dabhi +2 more
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Solid-State Electronics, 2012 This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics.
João Antonio Martino, C Claeys
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Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress
IEEE Transactions on Electron Devices, 2022Kookjin Lee +2 more
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Investigation of the characteristics of GIDL current in 90nm CMOS technology
Chinese Physics, 2006A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias VD has a strong effect on GIDL current as compared with the gate bias VG at the same drain–gate voltage VDG.
Chen Hai-Feng +7 more
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