Results 111 to 120 of about 445 (155)

Effects of X-ray irradiation on GIDL in MOSFETs

IEEE Electron Device Letters, 1992
The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOSFETs. In p-channel MOSFETs, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL.
A. Acovic, C.C.-H. Hsu, L.-C. Hsia, A. Balasinski, T.-P. Ma   +4 more
openaire   +1 more source

High Mobility and GIDL Erase-Compatible Characteristics in Hybrid Channel (Poly-Si/IGO) for Ultrahigh 3D NAND Flash Memory Applications

ACS Applied Electronic Materials
In this paper, we propose a hybrid channel (HC) structure in which the poly-Si and indium gallium oxide (IGO) channels coexist to achieve high mobility and gate-induced-drain-leakage (GIDL) erase-compatible characteristics for 3D NAND flash memory ...
Jae-Min Sim, Su-Hwan Choi, Seong-Hwan Ryu   +2 more
exaly   +2 more sources

PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

Microelectronics Reliability, 2010
Abstract We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition (Vg = high, Vd = low).
J. Y. Seo, J. E. Seok, W. S. Kim, N. H. Cha, J. S. Kang, B. S. So   +5 more
openaire   +1 more source

Approximations to field-effect factor and their use in GIDL modeling

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2011
New analytical approximations to field-effect factor used in gate induced drain leakage (GIDL) current modeling are presented. Modeling results for GIDL currents in sphere-shaped recessed channel array transistor (SRCAT) and NMOSFET obtained with the use of new approximations were compared to the measurement data in order to prove the validity of the ...
Nikita Kozhukhov, null Byoungchan Oh, null Hyungcheol Shin   +2 more
openaire   +1 more source

GIDL in Doped and Undoped FinFET Devices for Low-Leakage Applications

IEEE Electron Device Letters, 2013
Investigation of gate-induced drain leakage (GIDL) in thick-oxide dual-gate doped- and undoped-channel FinFET devices through 3-D process and device simulations is presented. For a given gate length (LG) and gate dielectric thickness, the placement and grading of the drain junction and the channel doping are shown to have a tremendous impact on GIDL ...
Pranita Kerber, Qintao Zhang, Siyuranga Koswatta, Andres Bryant   +3 more
openaire   +1 more source

A New Tunnelling Model To Calculate GIDL Current For MOSFET And TFET

2019 International Semiconductor Conference (CAS), 2019
This paper has proposed an innovative band to band tunneling current model using De- Casteljau’s algorithm, followed by Bezier curve method and WKB approximation. After verifying the validity of this proposed tunneling model with respect to electron energy and tunnel width, the expression of tunneling probability is applied to the graded drain MOSFET ...
A. Sen, J. Das
openaire   +1 more source

Impact of substrate bias on GIDL for thin-BOX ETSOI devices

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011
We present a detailed analysis of substrate bias (V bb ) impact on gate induced drain leakage (GIDL) for thin-BOX extremely thin silicon-on-insulator (ETSOI) with BOX thickness (T BOX ) ranging from 10 to 50 nm and inversion layer thicknesses (T INV ) ranging from 1.1 to 1.3 nm.
P. Kulkarni, Q. Liu, A. Khakifirooz, Y. Zhang, K. Cheng, F. Monsieur, P. Oldiges   +6 more
openaire   +1 more source

GIDL effect observed in FinFET shapes and Vt implant energy

2018 7th International Symposium on Next Generation Electronics (ISNE), 2018
The leakage of FinFETs with the different features and V t implant energy is observed and strongly related to the previous factors. Due to the process controllability, especially in photo-lithography, the multi-channel shape to promote the drive current seems not easy to be controlled well and deteriorates the desired target.
Ting-Wei Chao, Tien-Szu Shen, Chii-Ruey Lin, Ching-Chuan Chou, Chia-Hsien Chang, Wen-Shiang Liao, Mu-Chun Wang   +6 more
openaire   +1 more source

Analysis of GIDL Dependence on STI-induced Mechanical Stress

2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2006
The mechanical stress induced by shallow trench isolation (STI) signifilcantly affects the device behavior in the advanced CMOS technology. This paper presents an STI-dependent gate-induced drain leakage (GIDL) model and investigates the physical mechanisms in this phenomenon.
openaire   +1 more source

Effect of substrate negative bias on GIDL current in LDD nMOSFET's

2011 International Conference on Mechatronic Science, Electric Engineering and Computer (MEC), 2011
The effect of substrate negative bias V B on the gate-induced drain leakage (GIDL) current is studied. It is found that the negative V B leads GIDL current curve shifts upwards. The shift of GIDL current ΔI D /I D increases with increasing |V B |. The GIDL current at V G =−0.2V (in the low field region) increases with increasing |V B | more largely ...
Chen Haifeng, Du Huimin, Guo Lixin
openaire   +1 more source