Results 81 to 90 of about 445 (155)
The Impact of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETs for Low Power Device
In this research, we investigated the impact of Gate-Induced Drain Leakage (GIDL) on scaled Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) for low power application.
Hanim, A.R.; Micro Nano Electronics (MiNE), Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia. +6 more
core
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under CHC/GIDL alternating stress is investigated. CHC stress generates negative oxide charges while GIDL stress generates positive oxide charges in the gate oxide near drain region.
Kim, D +5 more
core +1 more source
1-Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing
Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks (RNNs), offers a promising framework for efficient temporal processing with minimal training overhead.
Md Yasir Bashir +2 more
doaj +1 more source
We propose a new optimized design strategy by considering the correlated effects of high-?? gate oxide and spacer dielectric on GIDL and DIBL in nanoscale MOSFET.
Jung, Jae Won +9 more
core +1 more source
Revisited approach for the characterization of Gate Induced Drain Leakage
International audienceThis work presents a re-investigation of the electrical characterisation of Gate Induced Drain Leakage (GIDL) [1][2]. The limits of the previously proposed extraction methods are underlined and a new approach is introduced. This new
Vinet, Maud +11 more
core +1 more source
Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress.
J.P. Xu +7 more
core +1 more source
Low Gate-Induced Drain Leakage and Its Physical Origins in Si Nanowire Transistors
Gate-induced drain leakage (GIDL) in Si nanowire transistors fabricated on silicon-on-insulator substrates is systematically studied. In narrow nanowire transistors, GIDL current is obtained by relatively small potential difference between the gate ...
Yukio Nakabayashi +4 more
core +1 more source
Degradation in gate-induced drain leakage (GIDL) current of n-MOSFET's with conventional SiO2 and oxynitride as gate dielectrics under hot-carrier stresses at different gate voltages is investigated.
Lai, PT +3 more
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Deep-learning-based ghost imaging
In this manuscript, we propose a novel framework of computational ghost imaging, i.e., ghost imaging using deep learning (GIDL). With a set of images reconstructed using traditional GI and the corresponding ground-truth counterparts, a deep neural ...
Haichao Wang +12 more
core +1 more source
Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs
Gate oxide aging in a gate-all-around (GAA) FET fabricated on a bulk substrate was successfully cured by gate-induced drain leakage (GIDL) current. High level of GIDL current flows during the off-state cures the gate oxide aging by hot-carrier injection (
Park, Jun-Young +2 more
core +1 more source

