Results 61 to 70 of about 445 (155)
, 2002 Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional ...
VASI, J +13 more
core +1 more source
Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM
IEEE AccessThis study investigates the row hammer tolerance and potential degradation by capacitive crosstalk (CC) and parasitic bipolar junction transistor (BJT) effect in vertically stacked dynamic random-access memory (VS-DRAM) using technology computer-aided ...
Minki Suh +7 more
doaj +1 more source
Investigation of the Scalability of Emerging Nanotube Junctionless FETs Using an Intrinsic Pocket
IEEE Journal of the Electron Devices Society, 2019 The detrimental lateral band-to-band tunneling (L-BTBT) governing the OFF-state performance of the junctionless (JL) FETs is more pronounced in emerging Nanotube (NT) transistor architectures. This restricts the scaling of NT JLFETs irrespective of their
Aakash Kumar Jain +2 more
doaj +1 more source
The ontogeny of vocal identity in carrion crows (Corvus corone)
Animal CognitionFor social species, the ability to identify individual group members is crucial. Vocalizations often carry individual signatures that can serve as cues for the caller’s identity.
Hannah Gidl +3 more
doaj +1 more source
Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs
IEEE Journal of the Electron Devices SocietyThe motivation of this study was to solve the high $\rm I_{D,off}$ problem in 8 Volt N-channel MOSFET. We experimented with implanting nitrogen into LDD at various doses.
Yoo Seon Song +12 more
doaj +1 more source
Harbor porpoise displacement by a solitary bottlenose dolphin in the Baltic Sea
Marine Mammal Science, Volume 41, Issue 1, January 2025.
Olga A. Filatova +4 more
wiley +1 more source
Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs
NanomaterialsCarbon nanotube field-effect transistors (CNT FETs) hold great promise for extending Moore’s Law, yet their performance is critically limited by excessive off-state leakage, caused by band-to-band tunneling (BTBT) in narrow bandgap CNT channels.
Hui Ma +3 more
doaj +1 more source
, 2009 A soft-programming-free operation method in unified RAM (URAM) is presented. An oxide/nitride/oxide (O/N/O) layer and a floating-body are integrated in a FinFET, thereby providing the versatile functions of a high-speed capacitorless 1T-DRAM, as well as ...
Han, Jin-Woo +3 more
core +1 more source
Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs
, 1999 Degradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a ...
Xu, Jingping, Lai, PT
core
Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM
IEEE AccessIn this article, a honeycomb vertical surrounding gate access transistor array scheme is proposed to further decrease the DRAM cell area with aggressively shrink bit line (BL) pitch and word line (WL) pitch adopting the ZigZag BL and WL air gap.
Wenqi Wang +10 more
doaj +1 more source