Results 51 to 60 of about 445 (155)
Journal of Information Display, 2018 The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode display.
KwangHyun Choi +5 more
doaj +1 more source
Nonlinear Variation Decomposition of Neural Networks for Holistic Semiconductor Process Monitoring
Advanced Intelligent Systems, Volume 6, Issue 10, October 2024.The nonlinear variation decomposition is proposed to decompose output variations from neural network inputs and to evaluate the influence of unit processes in each sample from semiconductor manufacturing. Herein, industrial 1Y nm node dynamic random‐access memory test vehicles with baseline and split tests introducing high‐k metal gates with a minimum ...
Hyeok Yun +11 more
wiley +1 more source
Concealable physical unclonable functions using vertical NAND flash memory
Nature CommunicationsPhysical Unclonable Functions (PUFs) can address the demand for enhanced hardware security. Vertical NAND (V-NAND) flash memory is the most commercialized non-volatile memory.
Sung-Ho Park +5 more
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An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution
IEEE Journal of the Electron Devices Society, 2018 This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performance ...
Min Hee Cho +7 more
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Advances in Quantum Imaging with Machine Intelligence
Laser &Photonics Reviews, Volume 18, Issue 8, August 2024.Quantum imaging exemplifies the fascinating and counter‐intuitive nature of the quantum world, where non‐local correlations are exploited for the imaging of objects by remote and non‐interacting photons. The field has exploded of late, driven by advances in the fundamental understanding of these processes, but also by advances in technology.
Chané Moodley, Andrew Forbes
wiley +1 more source
Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
, 2001 In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar
AATISH KUMAR +5 more
core +1 more source
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials, Volume 10, Issue 4, April 2024.The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in ...
Min‐Kyu Park +6 more
wiley +1 more source
DRAM 셀 트렌지스터의 GIDL RTN에 의한 산화막 트랩의 위치 의존성 분석 [PDF]
, 2014 학위논문 (석사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2014. 2. Shin Hyungcheol.As device dimensions are minimized, random telegraph noise (RTN) is dominant in determining the performance and reliability of metal-oxide-semiconductor field effect transistor (MOSFET).
콴뉴엔기아
core
Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate
IEEE Journal of the Electron Devices Society, 2018 Nanotube (NT) FETs have been proposed as the most promising architecture for the ultimate scaling of FETs. However, an enhanced L-BTBT restricts their scaling.
Aakash Kumar Jain +2 more
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Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
IEEE Journal of the Electron Devices SocietyWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung +3 more
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