Results 31 to 40 of about 347 (149)
A GIDL-Current Model for Advanced MOSFET Technologies without Binning
IPSJ Transactions on System LSI Design Methodology, 2009 A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced.
Inagaki, Ryosuke +4 more
openaire +2 more sources
S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s
IEEE Access, 2021 In this paper, we compare conventional saddle type FinFETs to partial isolation type saddle FinFETs (Pi-FinFETs) using 3D TCAD simulations to examine the effect of single charge traps for proper prediction of leakage current.
Jin Hyo Park +5 more
doaj +1 more source
Machine Learning‐Driven Variability Analysis of Process Parameters for Semiconductor Manufacturing
Advanced Intelligent Systems, Volume 8, Issue 5, May 2026.This research presents a machine learning approach that integrates nonlinear variation decomposition (NLVD) with statistical techniques to quantify the contribution of individual unit processes to performance and variance of figure of merit (FoM) at the LOT level.
Sinyeong Kang +6 more
wiley +1 more source
Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
Journal of Low Power Electronics and Applications, 2015 This work presents an analysis about the influence of the gate and source/drain underlap length (LUL) on UTBB FDSOI (UltraThin-Body-and-Buried-oxide Fully-Depleted-Silicon-On-Insulator) devices operating in conventional (VB = 0 V), dynamic threshold (DT,
Katia Regina Akemi Sasaki +4 more
doaj +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Advanced Functional Materials, Volume 36, Issue 23, 19 March 2026.This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak +14 more
wiley +1 more source
Advanced Materials, Volume 37, Issue 50, December 17, 2025.HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou +9 more
wiley +1 more source
1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
Advanced Intelligent Systems, Volume 7, Issue 8, August 2025.This work demonstrates the feasibility of utilizing capacitor‐less 1 transistor(1 T)‐dynamic random access memory as synaptic element with multilevel capability, large dynamic range of conductance, high linearity, ultralow energy consumption, high endurance exceeding 1015 cycles, and large integration density for artificial‐intelligence‐of‐things edge ...
MD Yasir Bashir +2 more
wiley +1 more source
Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
IEEE Access, 2020 The leakage mechanisms of inefficient volume depletion and lateral band to band tunneling (L-BTBT) restrict the scaling of SOI-junctionless (JL) FETs. Therefore, in this article, we investigate the scalability of the SOI-JLFETs by incorporating a ground ...
Aakash Kumar Jain +1 more
doaj +1 more source
Enhancing Device Performance with High Electron Mobility GeSn Materials
Advanced Electronic Materials, Volume 11, Issue 5, April 2025.Vertical gate‐all‐around nanowire n‐FETs based on GeSn‐alloys with Sn‐contents of 8% and 11% are presented. A great improvement in Ion, gm, and SS is found with increased Sn‐content. A fivefold increase in on‐current is observed for 11%‐GeSn compared to Ge, underlining the potential of GeSn for nanoelectronics applications.
Yannik Junk +10 more
wiley +1 more source