Results 11 to 20 of about 347 (149)

Advancing High‐Resolution Lake Bathymetry Reconstruction Through Geomorphologically Informed Deep Learning in High Mountain Asia

Water Resources Research
Accurate three‐dimensional (3D) lake bathymetry reconstruction is critical for water resources assessment and hydrological modeling yet remains constrained by data scarcity and oversimplified geometric assumptions. To address these challenges, we propose
Minglei Hou, Jiamu Chen, Jiahua Wei, Yang Shi, Wenqian Zhang, Shengling Hou, Zhen Qiao, Jianshi Zhao   +7 more
doaj   +2 more sources

The ontogeny of vocal identity in carrion crows (Corvus corone) [PDF]

Animal Cognition
For social species, the ability to identify individual group members is crucial. Vocalizations often carry individual signatures that can serve as cues for the caller’s identity.
Hannah Gidl, Sara Binder, Anna N. Osiecka, Barbara C. Klump   +3 more
doaj   +2 more sources

Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage [PDF]

Nanomaterials, 2022
In this study on multi-nanosheet field-effect transistor (mNS-FET)—one of the gate-all-around FETs (GAAFET) in the 3 nm technology node dimension—3D TCAD (technology computer-aided design) was used to attain optimally reduced substrate leakage from ...
Changhyun Yoo, Jeesoo Chang, Sugil Park, Hyungyeong Kim, Jongwook Jeon   +4 more
doaj   +2 more sources

Suppressing Gate-Induced Drain Leakage with an Asymmetric Gate Design in HiPco CNT FETs [PDF]

Nanomaterials
Carbon nanotube field-effect transistors (CNT FETs) hold great promise for extending Moore’s Law, yet their performance is critically limited by excessive off-state leakage, caused by band-to-band tunneling (BTBT) in narrow bandgap CNT channels.
Hui Ma, Senbiao Gu, Minglong Zhai, Honggang Liu   +3 more
doaj   +2 more sources

Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors [PDF]

Nanomaterials
Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression ...
Weixu Gong, Zhengyang Cai, Shengcheng Geng, Zhi Gan, Junqiao Li, Tian Qiang, Yanfeng Jiang, Mengye Cai   +7 more
doaj   +2 more sources

Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation

Small Structures
Oxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi, Jae‐Min Sim, Jeongmin Shin, Seong‐Hwan Ryu, Taewon Hwang, So Young Lim, Hye‐Jin Oh, Jae‐Hyeok Kwag, Jun‐Yeoub Lee, Ki‐Cheol Song, Yeonhee Lee, Minju Song, Junghwan Kim, Chang‐Kyun Park, Yun‐Heub Song, Jin‐Seong Park   +15 more
doaj   +2 more sources

Model-Inversion-Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory. [PDF]

Adv Sci (Weinh)
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Park SH, Koo RH, Ko J, Im J, Yang Y, Oh M, Shin D, Jung G, Lee JH.   +8 more
europepmc   +2 more sources

Self-Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network. [PDF]

Adv Sci (Weinh), 2023
The primary challenge that ferroelectric field‐effect transistors face is their vulnerability to the repeated program/erase cycle. To solve this issue, an efficient self‐curing method is presented. The proposed method successfully recovers synaptic fatigue damage, enhancing learning accuracy in the convolutional neural network.
Shin W, Im J, Koo RH, Kim J, Kwon KR, Kwon D, Kim JJ, Lee JH, Kwon D.   +8 more
europepmc   +2 more sources

Stacked Nanosheet Gate-All-Around Morphotropic Phase Boundary Field-Effect Transistors. [PDF]

Adv Sci (Weinh)
This study proposes a material design using ferroelectric‐antiferroelectric mixed‐phase HZO to achieve steep subthreshold swing and non‐hysteretic on‐current enhancement in morphotropic phase boundary field‐effect transistors (MPB‐FETs). For the first time, two‐stacked nanosheet GAA MPB‐FETs with optimized HZO are demonstrated, validating superior ...
Kim S, Kim HM, Kwon KR, Kwon D.
europepmc   +2 more sources

Simulation Acceleration of Bit Error Rate Prediction and Yield Optimization of 3D V-NAND Flash Memory

IEEE Access, 2023
When designing 3D V-NAND technologies with a gate induced drain leakage (GIDL) assisted erase scheme, many experiments must be conducted to determine the optimal GIDL design targets to achieve fast erase performance and secure yield characteristics ...
Yohan Kim, Soyoung Kim
doaj   +1 more source