Results 11 to 20 of about 445 (155)
, 2008 sponsorship: Fonds voor Wetenschappelijk Onderzoek Vlaanderen (FWO-Vlaanderen)
Wittocx, Johan +2 more
openaire +3 more sources
Small StructuresOxide semiconductors (OSs) are promising materials for NAND flash memory, offering the advantages of high field‐effect mobility and superior large‐area uniformity but suffering from low thermal stability, trade‐off between mobility and stability, and the
Su‐Hwan Choi +15 more
doaj +2 more sources
Self‐Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network
Advanced Science, Volume 10, Issue 15, May 26, 2023., 2023 The primary challenge that ferroelectric field‐effect transistors face is their vulnerability to the repeated program/erase cycle. To solve this issue, an efficient self‐curing method is presented. The proposed method successfully recovers synaptic fatigue damage, enhancing learning accuracy in the convolutional neural network.
Wonjun Shin +8 more
wiley +1 more source
Pediatric Pulmonology, Volume 58, Issue 4, Page 1051-1058, April 2023., 2023 Abstract Background In children with primary ciliary dyskinesia (PCD), measures more sensitive than spirometry are needed to characterize underlying pulmonary impairment. Electrical impedance tomography (EIT) is a promising noninvasive method for monitoring the distribution of lung ventilation, and it does not require patient collaboration. We aimed to
Mariacarola Pensabene +8 more
wiley +1 more source
Advanced Electronic Materials, Volume 9, Issue 1, January 2023., 2023 Three‐gate reconfigurable transistors based on Al‐Si‐Al heterostructures with single‐elementary Al contacts, capable of dynamically altering between n‐ or p‐type operations even during run‐time are proposed. Exploiting reconfigurability on transistor level and showing comparability with complementary metal‐oxide‐semiconductor technology, a ...
Raphael Böckle +8 more
wiley +1 more source
Emerging reconfigurable electronic devices based on two‐dimensional materials: A review
InfoMat, Volume 4, Issue 10, October 2022., 2022 An intense survey of novel reconfigurable devices based on 2D materials is presented with a focus on reconfigurable transistors that offer run‐time control of charge carriers, threshold voltage, and subthreshold swing, and reconfigurable heterostructures manifested as multiple device configurations in one device. The working principles of these devices
Wenwen Fei +4 more
wiley +1 more source
Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET
Modelling and Simulation in Engineering, Volume 2022, Issue 1, 2022., 2022 Ferroelectric negative capacitance materials have now been proposed for lowering electronics energy dissipation beyond basic limitations. In this paper, we presented the analysis on the performance of negative capacitance (NC) FinFET in comparison with conventional gate dielectrics by using a separation of variables approach, which is an optimal quasi ...
Sayem Ul Alam +6 more
wiley +1 more source
IMPACT OF USING FEED ADDITIVES WITH CORN STOVER SILAGE IN LAMB RATIONS _ ON PERFORMANCE, DIGESTIBILITY, RUMEN ACTIVITY, SOME BLOOD CONSTITUENTS AND CARCASS TRIATS. [PDF]
Journal of Animal and Poultry Production, 2006 Sixteen Ossimi male lambs weighed 21.69 kg on average and aged 5 months were used in a 204 days feeding trial. Animals were randomly divided into four equal groups (4 animals each ) to study the effect of feeding corn stover silage with different feed
Hoda El-Hosseiny +3 more
doaj +1 more source
IEEE Access, 2017 In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj +1 more source
A GIDL-Current Model for Advanced MOSFET Technologies without Binning
IPSJ Transactions on System LSI Design Methodology, 2009 A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs is proposed and implemented into HiSIM2, complete surface potential based MOSFET model. The model considers two tunneling mechanisms, the band-to-band tunneling and the trap assisted tunneling. Totally 7 model parameters are introduced.
Inagaki, Ryosuke +4 more
openaire +2 more sources