Results 21 to 30 of about 347 (149)

Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model

IEEE Journal of the Electron Devices Society, 2022
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (GIDL)
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi   +8 more
doaj   +1 more source

Design impact on three gate Dynamic Flash Memory (3G_DFM) for long hole retention time and robust disturbance shield

Memories - Materials, Devices, Circuits and Systems, 2023
TCAD simulation using Silvaco software has shown that the 3G_DFM, which has SG1 (Select Gate 1), PL (Plate Line Gate), and SG2 (Select Gate 2) between SL (Source Line) and BL (Bit Line), has a long retention time of 100ms at 85 °C, and a robust ...
Koji Sakui, Yisuo Li, Masakazu Kakumu, Kenichi Kanazawa, Iwao Kunishima, Yoshihisa Iwata, Nozomu Harada   +6 more
doaj   +1 more source

Using electrical impedance tomography to characterize lung impairment of children with primary ciliary dyskinesia: A pilot cross‐sectional study

Pediatric Pulmonology, Volume 58, Issue 4, Page 1051-1058, April 2023., 2023
Abstract Background In children with primary ciliary dyskinesia (PCD), measures more sensitive than spirometry are needed to characterize underlying pulmonary impairment. Electrical impedance tomography (EIT) is a promising noninvasive method for monitoring the distribution of lung ventilation, and it does not require patient collaboration. We aimed to
Mariacarola Pensabene, Simone Gambazza, Federica Carta, Alessia Rocchi, Mara Lelii, Barbara Madini, Vittoria Hassan, Marta Piotto, Maria Francesca Patria   +8 more
wiley   +1 more source

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Applied Sciences, 2018
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage.
Hsin-Hui Hu, Yan-Wei Zeng, Kun-Ming Chen
doaj   +1 more source

Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors

IEEE Journal of the Electron Devices Society, 2022
A new approach of narrowing sub-fin with little extra process cost for suppressing parasitic-channel-effect (PCE) on vertically-stacked horizontal gate-all-around (GAA) Si nanosheet field-effect-transistors (NS-FETs) is proposed.
Jie Gu, Qingzhu Zhang, Zhenhua Wu, Yanna Luo, Lei Cao, Yuwei Cai, Jiaxin Yao, Zhaohao Zhang, Gaobo Xu, Huaxiang Yin, Jun Luo, Wenwu Wang   +11 more
doaj   +1 more source

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures

Advanced Electronic Materials, Volume 9, Issue 1, January 2023., 2023
Three‐gate reconfigurable transistors based on Al‐Si‐Al heterostructures with single‐elementary Al contacts, capable of dynamically altering between n‐ or p‐type operations even during run‐time are proposed. Exploiting reconfigurability on transistor level and showing comparability with complementary metal‐oxide‐semiconductor technology, a ...
Raphael Böckle, Masiar Sistani, Martina Bažíková, Lukas Wind, Zahra Sadre‐Momtaz, Martien I. den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber   +8 more
wiley   +1 more source

ROLE OF PROBIOTICS 0N HEMATOLOGICAL AND IMMUNOLOGICAL PARAMETERS IN GROWEING RABBITS [PDF]

Journal of Animal and Poultry Production, 2006
The purpose of the present study was to determine if probiotic (Protexin) supplementation to drinking water at different levels (1.0, 2.5 and 5.09 {Litter of drinking water) would have a beneficial effect on immunological and hematological parameters ...
A. Sedki, A. El-Kaiaty, Faten lbrahim, Noha Abd-El-Mgied,   +3 more
doaj   +1 more source

Emerging reconfigurable electronic devices based on two‐dimensional materials: A review

InfoMat, Volume 4, Issue 10, October 2022., 2022
An intense survey of novel reconfigurable devices based on 2D materials is presented with a focus on reconfigurable transistors that offer run‐time control of charge carriers, threshold voltage, and subthreshold swing, and reconfigurable heterostructures manifested as multiple device configurations in one device. The working principles of these devices
Wenwen Fei, Jens Trommer, Max Christian Lemme, Thomas Mikolajick, André Heinzig   +4 more
wiley   +1 more source

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs

IEEE Access, 2017
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj   +1 more source

IMPACT OF USING FEED ADDITIVES WITH CORN STOVER SILAGE IN LAMB RATIONS _ ON PERFORMANCE, DIGESTIBILITY, RUMEN ACTIVITY, SOME BLOOD CONSTITUENTS AND CARCASS TRIATS. [PDF]

Journal of Animal and Poultry Production, 2006
Sixteen Ossimi male lambs weighed 21.69 kg on average and aged 5 months were used in a 204 days feeding trial. Animals were randomly divided into four equal groups (4 animals each ) to study the effect of feeding corn stover silage with different feed
Hoda El-Hosseiny, KH. Mouse, Safaa Abd El-Azeem, Fathia A. lbrahlm   +3 more
doaj   +1 more source