Results 41 to 50 of about 347 (149)
Dual-Doped Cylindrical Bit-Line Pad for High-Efficiency Bulk Erase in V-NAND Flash
IEEE AccessWe propose a novel dual-doped cylindrical bit-line (DDC-BL) pad structure for vertical NAND (V-NAND) flash memory to enable efficient bulk erase operation through direct hole injection.
Choasub Kim +4 more
doaj +1 more source
SiGe-Surrounded Bitline Structure for Enhancing 3D NAND Flash Erase Speed
Applied SciencesThree-dimensional NAND Flash has adopted the cell-over-peripheral (COP) structure to increase storage density. Unlike the conventional structure, the COP structure cannot directly increase the channel potential via substrate bias during the erase ...
Dohyun Kim, Wonbo Shim
doaj +1 more source
Journal of Information Display, 2018 The low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) is the optimal device for the backplane of the organic light-emitting diode display.
KwangHyun Choi +5 more
doaj +1 more source
European Journal of Cancer Care, Volume 2025, Issue 1, 2025.Background: To systematically review the risk factors for central venous access device (CVAD)–associated complications in pediatric patients with cancer. Methods: A scoping review with systematic search criteria was conducted using PubMed, Embase, and CINAHL databases from 2012 to 2022. Cohort studies and the control arm of randomized controlled trials,
Jenna L. Nunn +6 more
wiley +1 more source
Nonlinear Variation Decomposition of Neural Networks for Holistic Semiconductor Process Monitoring
Advanced Intelligent Systems, Volume 6, Issue 10, October 2024.The nonlinear variation decomposition is proposed to decompose output variations from neural network inputs and to evaluate the influence of unit processes in each sample from semiconductor manufacturing. Herein, industrial 1Y nm node dynamic random‐access memory test vehicles with baseline and split tests introducing high‐k metal gates with a minimum ...
Hyeok Yun +11 more
wiley +1 more source
Advances in Quantum Imaging with Machine Intelligence
Laser &Photonics Reviews, Volume 18, Issue 8, August 2024.Quantum imaging exemplifies the fascinating and counter‐intuitive nature of the quantum world, where non‐local correlations are exploited for the imaging of objects by remote and non‐interacting photons. The field has exploded of late, driven by advances in the fundamental understanding of these processes, but also by advances in technology.
Chané Moodley, Andrew Forbes
wiley +1 more source
An Innovative Indicator to Evaluate DRAM Cell Transistor Leakage Current Distribution
IEEE Journal of the Electron Devices Society, 2018 This paper is the first to propose an innovative method for measuring variations in dynamic random access memory (DRAM) cell transistors. Structural dispersion induces an extremely high cell leakage current, which determines aspects of DRAM performance ...
Min Hee Cho +7 more
doaj +1 more source
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials, Volume 10, Issue 4, April 2024.The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in ...
Min‐Kyu Park +6 more
wiley +1 more source
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
IEEE Journal of the Electron Devices SocietyWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung +3 more
doaj +1 more source
, 2008 sponsorship: Fonds voor Wetenschappelijk Onderzoek Vlaanderen (FWO-Vlaanderen)
Wittocx, Johan +2 more
openaire +1 more source