IEEE Access, 2017 In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj +1 more source
Improved drive current in RF vertical MOSFETS using hydrogen anneal [PDF]
, 2011 This letter reports a study on the effect of a hydrogen anneal after silicon pillar etch of surround-gate vertical MOSFETs intended for RF applications.
Abuelgasim, A. +6 more
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Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric [PDF]
, 1995 This paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics.
Lai, PT, Ng, WT, Xu, Z
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Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements [PDF]
, 2010 The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements.
Girard, Sylvain +4 more
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Direct hemoglobin measurement by monolithically integrated optical beam guidance [PDF]
, 2005 We present a concept for optical beam guidance by total internal reflection (TIR) at V-grooves as retro reflectors which are monolithically integrated on a microfluidic "lab-on-a-disk".
Brefka, T. +8 more
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Liposomal delivery of hydrophobic RAMBAs provides good bioavailability and significant enhancement of retinoic acid signalling in neuroblastoma tumour cells [PDF]
, 2020 Retinoid treatment is employed during residual disease treatment in neuroblastoma, where the aim is to induce neural differentiation or death in tumour cells.
Bilip, Maja +11 more
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S-TAT Leakage Current in Partial Isolation Type Saddle-FinFET (Pi-FinFET)s
IEEE Access, 2021 In this paper, we compare conventional saddle type FinFETs to partial isolation type saddle FinFETs (Pi-FinFETs) using 3D TCAD simulations to examine the effect of single charge traps for proper prediction of leakage current.
Jin Hyo Park +5 more
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Surface Potential-Based Polycrystalline-Silicon Thin-Film Transistors Compact Model by Nonequilibrium Approach [PDF]
, 2013 We propose a surface potential-based polycrystalline silicon thin-film transistors (poly-Si TFTs) compact model considering a nonequilibrium state. A drain current model considers grain boundary (GB) trap-related physical phenomena: composite mobility of
Ikeda H., Sano N., 佐野 伸行
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Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis [PDF]
, 2008 Ionizing radiation effects on CMOS image sensors (CIS) manufactured using a 0.18 µm imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and MOSFETs.
Bernard, Frédéric +4 more
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Mountaineering as a specific form of recreation in the late 19th century [PDF]
, 2014 Aim of this paper is to characterize mountaineering in the late 19th century as a specific form of recreation on the example of the Prague section of ‘Deutschen und Österreichischen Alpenverein’ (DuÖAV).
Chaloupska, Pavlina
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