Results 61 to 70 of about 1,624 (169)
European Journal of Cancer Care, Volume 2025, Issue 1, 2025.Background: To systematically review the risk factors for central venous access device (CVAD)–associated complications in pediatric patients with cancer. Methods: A scoping review with systematic search criteria was conducted using PubMed, Embase, and CINAHL databases from 2012 to 2022. Cohort studies and the control arm of randomized controlled trials,
Jenna L. Nunn +6 more
wiley +1 more source
SiGe-Surrounded Bitline Structure for Enhancing 3D NAND Flash Erase Speed
Applied SciencesThree-dimensional NAND Flash has adopted the cell-over-peripheral (COP) structure to increase storage density. Unlike the conventional structure, the COP structure cannot directly increase the channel potential via substrate bias during the erase ...
Dohyun Kim, Wonbo Shim
doaj +1 more source
The Potential and the Drawbacks of Underlap Single-Gate Ultrathin SOI MOSFET [PDF]
, 2008 This paper describes the performance prospect of underlapped single-gate ultra-thin (USU) SOI MOSFET with a low-k or high-k gate dielectric from the viewpoint of both digital and analog applications.
Hamada Mitsuo +4 more
core +1 more source
Nonlinear Variation Decomposition of Neural Networks for Holistic Semiconductor Process Monitoring
Advanced Intelligent Systems, Volume 6, Issue 10, October 2024.The nonlinear variation decomposition is proposed to decompose output variations from neural network inputs and to evaluate the influence of unit processes in each sample from semiconductor manufacturing. Herein, industrial 1Y nm node dynamic random‐access memory test vehicles with baseline and split tests introducing high‐k metal gates with a minimum ...
Hyeok Yun +11 more
wiley +1 more source
Controlling L-BTBT in Emerging Nanotube FETs Using Dual-Material Gate
IEEE Journal of the Electron Devices Society, 2018 Nanotube (NT) FETs have been proposed as the most promising architecture for the ultimate scaling of FETs. However, an enhanced L-BTBT restricts their scaling.
Aakash Kumar Jain +2 more
doaj +1 more source
The course of type 1 hepato-renal syndrome post liver transplantation [PDF]
, 2005 Background. Hepato-renal syndrome (HRS) is a functional form of renal failure that occurs in patients with end-stage liver disease. Previously considered fatal without liver transplantation, treatment with vasoconstrictors and albumin has been ...
Marik, PE, Starzl, TE, Wood, K
core +1 more source
Advances in Quantum Imaging with Machine Intelligence
Laser &Photonics Reviews, Volume 18, Issue 8, August 2024.Quantum imaging exemplifies the fascinating and counter‐intuitive nature of the quantum world, where non‐local correlations are exploited for the imaging of objects by remote and non‐interacting photons. The field has exploded of late, driven by advances in the fundamental understanding of these processes, but also by advances in technology.
Chané Moodley, Andrew Forbes
wiley +1 more source
A new circuit technique for reduced leakage current in Deep Submicron CMOS technologies [PDF]
, 2005 Modern CMOS processes in the Deep Submicron regime are restricted to supply voltages below 2 volts and further to account for the transistors' field strength limitations and to reduce the power per logic gate.
A. Schmitz, A. Schmitz, R. Tielert
core
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials, Volume 10, Issue 4, April 2024.The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in ...
Min‐Kyu Park +6 more
wiley +1 more source
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
IEEE Journal of the Electron Devices SocietyWe analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE)
Su Yeon Jung +3 more
doaj +1 more source