Results 21 to 30 of about 16,309 (85)
ERASE-Seq performance comparisons.
, 2018 ERASE-Seq performance comparisons.
Laurie Kurihara (5076578) +6 more
core +1 more source
, 2018 (A) ERASE-Seq distinguishes true DNA variants from false positives by statistically comparing presence across a series of sample and control technical replicates.
Laurie Kurihara (5076578) +6 more
core +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES [PDF]
, 2012 Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core
1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
Advanced Intelligent Systems, Volume 7, Issue 8, August 2025.This work demonstrates the feasibility of utilizing capacitor‐less 1 transistor(1 T)‐dynamic random access memory as synaptic element with multilevel capability, large dynamic range of conductance, high linearity, ultralow energy consumption, high endurance exceeding 1015 cycles, and large integration density for artificial‐intelligence‐of‐things edge ...
MD Yasir Bashir +2 more
wiley +1 more source
, 2023 In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs).
Anyan Du +13 more
core +1 more source
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials, Volume 10, Issue 4, April 2024.The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in ...
Min‐Kyu Park +6 more
wiley +1 more source
, 2021 In this study, we developed a V-NAND with an improved IGZO-P type (IP) floating filler (FF) structure based on an IGZO channel verified in previous studies and demonstrated that it has a very fast erase speed through device simulation.
Jae Kyeong Jeong +4 more
core +1 more source
GidL: A grounder for FO+ [PDF]
, 2008 In this paper, we present GidL, a grounder for FO+. FO+ is a very expressive extension of first-order logic with several constructs such as inductive definitions, aggregates and arithmetic.
Mariën, Maarten +2 more
core
High field induced stress suppression of GIDL effects in TFTs [PDF]
, 2010 Gate-Induced drain leakage (GIDL) is an unwanted short-channel effect that occurs at higher drain biases in an overdriven off state of a transistor. The GIDL is the result of a deep depletion region that forms in the drain at high drain-to-gate biases ...
McCabe, Andrew
core +1 more source