Results 21 to 30 of about 93 (56)
1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
Advanced Intelligent Systems, Volume 7, Issue 8, August 2025.This work demonstrates the feasibility of utilizing capacitor‐less 1 transistor(1 T)‐dynamic random access memory as synaptic element with multilevel capability, large dynamic range of conductance, high linearity, ultralow energy consumption, high endurance exceeding 1015 cycles, and large integration density for artificial‐intelligence‐of‐things edge ...
MD Yasir Bashir +2 more
wiley +1 more source
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
Advanced Electronic Materials, Volume 10, Issue 4, April 2024.The first‐ever engineering application of lateral migration in charge trap memory, which is perceived as a disadvantage in the memory industry, is proposed to achieve low‐power operation while maintaining superior retention and improving endurance. By varying the length of tunneling oxide, the proposed device diverges from conventional techniques in ...
Min‐Kyu Park +6 more
wiley +1 more source
차세대 3D 메모리 소자의 채널 재료로서 원자층 증착된 산화 아연 주석 박막
, 2021 학위논문 (박사) -- 서울대학교 대학원 : 공과대학 재료공학부, 2021. 2. 황철성.메모리 셀 스트링이 3 차원 수직 구조로 배열 된 수직 적층형 NAND (V-NAND) 플래시 메모리는 2013 년에 처음 상용화되었다. 그 이후 V-NAND 플래시 메모리의 bit는 꾸준히 증가하였으나, 낮은 이동성을 가진 poly-Si 채널의 셀 전류 부족으로 인해 단순히 수직 레이어의 수를 늘리는 전략은 한계에 도달 할 것으로 예상된다.
김준식
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ELECTRICAL CHARACTERIZATION, PHYSICS, MODELING AND RELIABILITY OF INNOVATIVE NON-VOLATILE MEMORIES
, 2012 Enclosed in this thesis work it can be found the results of a three years long research activity performed during the XXIV-th cycle of the Ph.D. school in Engineering Science of the Università degli Studi di Ferrara. The topic of this work is concerned
Zambelli, Cristian
core
Numerous approaches have been investigated for the implementation of neuromorphic applications, which aim to emulate the neural network architecture of the human brain.
Song, Moonkyu
core +1 more source
, 2020 DOTTORATOLe tecnologie di memoria Flash sono state, già a partire dalla loro prima introduzione, oggetto di un processo di scaling ininterrotto che ha permesso loro di aumentarne continuamente la densità di immagazzinamento per singolo bit, rendendole ...
Malavena, Gerardo
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Simulation Study on the Role of GIDL Current for Erase Operation in FeFETs
JSAP Annual Meetings Extended Abstracts, 2021 Mei, Xiaoran +3 more
openaire +1 more source
Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 You K, Jin L, Jia J, Huo Z.
europepmc +1 more source
Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]
Micromachines (Basel), 2023 An U +6 more
europepmc +1 more source
통합 메모리에서 다중 레벨 셀 비 휘발성 메모리에 관한 연구
, 2009 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2009. 8., [ iv, 61 p. ]Unified random access memory (URAM)─functioning 2-bit non-volatile flash memory and a capacitorless 1T-DRAM in a single transistor─is presented based on a partially-depleted (PD) SONOS FinFET and ...
Kim, Dong-Hyun, 김동현
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