Results 121 to 130 of about 779 (192)
A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode. [PDF]
Cao X, Liu J, An Y, Ren X, Yin Z.
europepmc +1 more source
Evaluation of electric vehicle performance using driving cycle clustering based on motor-inverter losses and efficiency. [PDF]
Abdelali K +4 more
europepmc +1 more source
Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics. [PDF]
Lu Y +6 more
europepmc +1 more source
A novel pulse-current waveform circuit for low-energy consumption and low-noise transcranial magnetic stimulation. [PDF]
Tan X, Guo A, Tian J, Li Y, Shi J.
europepmc +1 more source
Simulation and Assessment of Thermal-Stress Analysis of Welding Materials in IGBT. [PDF]
Yang Y, Chen J, Liu B, Wu Y.
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Bipolar Static Induction Transistor With Insulated Gate
IEEE Transactions on Electron Devices, 2022In this article, we show a simple power device architecture that combines the features of the SIT and the power MOSFET: insulated gate, positive threshold, fast switching, current deep in the semiconductor, and compact design. It has the conduction characteristics of a BSIT, and it is voltage-controlled as a MOSFET.
Colalongo L., Richelli A.
openaire +1 more source
2020 6th International Conference on Applied System Innovation (ICASI), 2020
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang +4 more
openaire +1 more source
Insulated Gate Bipolar Transistor (IGBT) has demonstrated the capability of providing relatively high current at various breakdown voltages. The driving mechanism relies on the input bias applied on the insulated gate, which is equivalent to a MOSFET transistor with high input impedance.
Hsin-Chia Yang +4 more
openaire +1 more source

