Results 151 to 160 of about 779 (192)
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Insulated gate bipolar transistor with trench gate structure of accumulation channel
Journal of Semiconductors, 2010An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2.
Qian Mengliang +3 more
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A thermal model for insulated gate bipolar transistor module
IEEE Transactions on Power Electronics, 2004A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/.
null Zhaohui Luo +2 more
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A novel trench clustered insulated gate bipolar transistor (TCIGBT)
IEEE Electron Device Letters, 2000A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate
O. Spulber +7 more
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Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
IEEE Transactions on Plasma Science, 2013This paper describes a low cost, easy-to-implement circuit for triggering ignitrons in plasma physics experiments and other pulsed power applications. Using insulated gate bipolar transistors (IGBTs) for rapid switching, the circuit delivers >2 peak current from a 0.1-μF capacitor to the ignitron trigger pin with a rise time of ~ 0.6 μs.
Chaplin, Vernon H., Bellan, Paul M.
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Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
Japanese Journal of Applied Physics, 2010In current insulated gate bipolar transistor (IGBT) technology, a corner or centered gate pad is employed with polycrystalline silicon (poly-Si) to form the metal oxide semiconductor (MOS) gate structure which forms a resistor–capacitor (RC) network across the die. This paper presents, for the first time, an analysis using circuit simulator, SABER,
Hongyao Long +3 more
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Insulated Gate Bipolar Transistors based on Pure Boron Collectors
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019Continuous efforts are invested to improve mid- and high-voltage devices to improve on-state resistances, switching performance and overall power losses. However, given the current maturity of Silicon technologies, significant improvements are difficult to achieve.
Ahmed Elsayed +2 more
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Equivalent circuit model for an insulated gate bipolar transistor
IEE Proceedings - Electric Power Applications, 2005An equivalent-circuit model for an insulated gate bipolar transistor is developed. The model is based on a one-dimensional device simulation model. It also adopts a multi-MOS model so as to be able to include the doping variation in the MOS body. The model can be used for both circuit simulations and simple device simulations.
C.-H. Kao, C.-C. Tseng, Y.-C. Liang
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An insulated gate bipolar transistor with high surge endurance
Electronics and Communications in Japan (Part II: Electronics), 1996AbstractThe relationship between the device property under drain‐source breakdown and device structure parameters of insulated gate bipolar transistors was simulated. Then the following facts were revealed: 1) the impurity concentration in the n−drain layer and the layer thickness determine the breakdown mode.
Norihito Tokura +2 more
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Computer Aided Optimization of Insulated Gate Bipolar Transistors
ECS Meeting AbstractsCompared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies.
Pranathi Brungi, Petru Andrei
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D.C. Drive System With the Insulated Gate Bipolar Transistors
2006 IEEE International Conference on Automation, Quality and Testing, Robotics, 2006A reversible D.C. drive system, which employs a four-quadrant chopper with the insulated gate bipolar transistors (IGBT), is presented. The chopper circuit employs a "half-bridge" configuration. The operation of the converter was tested at a command frequency of [1÷10] kHz.
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