Results 21 to 30 of about 779 (192)
Effect of solder layer crack on the thermal reliability of Insulated Gate Bipolar Transistors
Case Studies in Thermal Engineering, 2019 In order to study the thermal reliability of solder layer fatigue damage in Insulated Gate Bipolar Transistors (IGBT), the Finite Element Analysis (FEA) of the crack damage of the solder layer is described.
Mingxing Du +4 more
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Scaling Design Effects on Surface Buffer IGBT Characteristics
IEEE Journal of the Electron Devices Society, 2022 Scaling design effects on surface buffer (SB) insulated gate bipolar transistor (IGBT) is analyzed not only for power loss reduction but also for switching controllability and robustness using TCAD simulation.
Wataru Saito, Shin-Ichi Nishizawa
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A Novel Shielded IGBT (SIGBT) With Integrated Diodes
IEEE Journal of the Electron Devices Society, 2020 A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely ...
Rongxin Chen +3 more
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A geophysical pulse voltage generator for seismic and electric exploration of the subsurface [PDF]
Геосистемы переходных зон, 2021 This article describes the process and results of the development and testing of a cost-effective, portable, safe to move by air geophysical pulse voltage generator for seismic exploration of the subsurface.
Ilia P. Dudchenko +3 more
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Insights into radiation displacement defect in an insulated-gate bipolar transistor
AIP Advances, 2021 The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using the computer-aided design simulation technology.
Kihyun Kim, Jungsik Kim
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The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs
Metrology and Measurement Systems, 2015 In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed.
Górecki Krzysztof, Górecki Paweł
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Доклады Белорусского государственного университета информатики и радиоэлектроникиThis work presents the results of computer simulations of the operational characteristics of vertical channel Insulated Gate Bipolar Transistor (IGBT) device structures designed according to the following technologies: Trench-IGBT, Superjunction Trench ...
Trong Thanh Nguyen +3 more
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Failure precursors for insulated gate bipolar transistors (IGBTs) [PDF]
9th International Seminar on Power Semiconductors (ISPS 2008), 2008 Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and ...
N. Patil, D. Das, K. Goebel, M. Pecht
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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor
Engineering, 2015 Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and
Guoyou Liu, Rongjun Ding, Haihui Luo
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Evaluation of the turn‐off transient controllability for high‐power IGBT modules
IET Power Electronics, 2022 The efficient and flexible conversion of electrical energy is increasingly accomplished by megawatt insulated gate bipolar transistor (IGBT) modules. Their dynamic performance is influenced by the gate driver control, operating points and the switching ...
Kun Tan +7 more
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