Results 51 to 60 of about 779 (192)

Domain engineered gallium oxide phototransistors enabling intelligent ultraviolet vision with dynamic gating

InfoMat, EarlyView.
Single‐domain Si‐doped β‐Ga2O3 thin films grown on off‐axis sapphire eliminate domain boundaries, improving transport and photogating. Gate‐pulse modulation suppresses persistent photoconductivity, yielding ultrafast response and high detectivity. Integrated into a 24 × 24 array, the devices enable high frame rate DUV imaging and energy‐efficient ...
Jae Young Kim, Byungsoo Kim, Hee A Kim, Gi Baek Nam, Hyuk Jin Kim, Yoon Jung Lee, Seung Ju Kim, Suin Yi, Yongjo Park, Ho Won Jang   +9 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation

Small, EarlyView.
An amorphous–crystalline mixture BN (acm‐BN) is synthesized through low‐pressure chemical vapor deposition, achieving balanced resistive switching with low SET voltage and stable RESET. High‐resolution transmission electron microscopy reveals that BN films are fully amorphous at 930 °C, a mixed amorphous–crystalline phase is achieved at 990 °C.
Kyung Jin Ahn, Do Kyeong Yun, Mi Hyang Park, Hong Woon Yun, Minh Chien Nguyen, Van Tu Vu, Huamin Li, Pallavi Aggarwal, Woo Jong Yu   +8 more
wiley   +1 more source

Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

Crystals, 2020
The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a
Meng Zhang, Baikui Li, Jin Wei
doaj   +1 more source

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

Online Degradation State Assessment Methodology for Multi-Mode Failures of Insulated Gate Bipolar Transistor

IEEE Access, 2020
Insulated-gate bipolar transistors (IGBTs) are one of the most vulnerable components that account for a significant fraction of inverter and converter failures. This paper conducts a degradation analysis of IGBTs using run-to-failure measurements. Online
Xiangxiang Liu, Lingling Li, Diganta Das, Ijaz Haider Naqvi, Michael G. Pecht   +4 more
doaj   +1 more source

Structure‐Property‐Application Correlations of Early Transition Metal Chalcogenides: A Dichalcogenide‐Centered Perspective

Small, EarlyView.
ETM‐based chalcogenides exhibit rich structural diversity and tunable electronic and catalytic properties. This review critically summarizes structure–property–application relationships in ETM‐based chalcogenides, highlighting recent advances in electronic devices, electrocatalysis, and energy‐related applications, while outlining key challenges and ...
Sachin Jaidka, Aayush Gupta, Daksh Shelly, Yashpreet Kaur, Anushka Garg, Seul‑Yi Lee, Soo‑Jin Park   +6 more
wiley   +1 more source

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

IEEE Journal of the Electron Devices Society, 2020
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff).
Ying Wang, Cheng-Hao Yu, Hong-Kai Mao, Xue Wu, Fang-Wen Su, Xing-Ji Li, Jian-Qun Yang   +6 more
doaj   +1 more source

Emerging 2D Material Prototype Devices Toward Energy‐Efficient and Sustainable Optoelectronics

SusMat, EarlyView.
Driven by the growing demand for efficient data processing in artificial intelligence, fully integrated 2D material All‐in‐One devices that integrate sensing, memory, and computing functions show rapid development. These devices deliver ultra‐low power consumption and high‐speed operation, offering great potential for next‐generation intelligent edge ...
Jiazheng Wang, Decai Ouyang, Na Zhang, Yuan Li, Tianyou Zhai   +4 more
wiley   +1 more source

Reliability evaluation of MMC system considering working conditions

The Journal of Engineering, 2018
The reliability is a key issue of the high-voltage high-power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can
Tao Zheng, Meng Huang, Lingyi Zhu, Xiaoming Zha   +3 more
doaj   +1 more source