Results 71 to 80 of about 779 (192)

Three-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development

, 1992
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing ...
Gilbert, P.V., Neudeck, G.W.
openaire   +2 more sources

Stability of Lead‐Free Perovskite Solar Cells

Advanced Sustainable Systems, Volume 10, Issue 3, March 2026.
This review article discusses the very recent status of stability of lead‐free perovskite solar cells, possible challenges, fabrication techniques, the degradation mechanism of lead‐free PSCs affecting stability, possible causes hindering the simultaneous improvement of efficiency and stability of lead‐free PSCs, potential outlook, and future research ...
Pranta Barua, Naveen Kumar Elumalai, Ashraf Uddin, Prashant Sonar, Kannoorpatti Krishnan   +4 more
wiley   +1 more source

Wearable and Implantable Devices for Continuous Monitoring of Muscle Physiological Activity: A Review

Advanced Science, Volume 13, Issue 15, 13 March 2026.
Recent advances in materials and device engineering enable continuous, real‐time monitoring of muscle activity via wearable and implantable systems. This review critically summarizes emerging technologies for tracking electrophysiological, biomechanical, and oxygenation signals, outlines fundamental principles, and highlights key challenges and ...
Zhengwei Liao, Ata Golparvar, Mohammad Javad Bathaei, Filipe Arroyo Cardoso, Clementine M. Boutry   +4 more
wiley   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Beyond Cocrystals: Hierarchical Functional Assemblies via Noncovalent Synthesis

Advanced Science, Volume 13, Issue 13, 3 March 2026.
Non‐covalent interactions (NCIs) drive the formation of organic cocrystals with diverse structures and tunable optoelectronic properties. This review explores the essential factors governing these properties, highlighting how the sequential nucleation of cocrystals leads to the self‐assembly of organic hierarchical structures (OHSs).
Ya‐Nan Zhu, Jin Feng, Ying‐Xin Ma, Hong‐Tao Lin, Li‐Wei Xie, Qi‐Liang Peng, Xue‐Dong Wang   +6 more
wiley   +1 more source

Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

Eletrônica de Potência
The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost.
Pedro H. G. Vilela , Edmar F. Cota, Heverton A. Pereira, Tomás P. Corrêa, Allan F. Cupertino   +4 more
doaj   +1 more source

A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer. [PDF]

Micromachines (Basel), 2023
Wang Z, Yang C, Huang X.
europepmc   +1 more source

The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
This review provides a comprehensive overview of organic electrochemical transistors (OECTs) for brain‐inspired computing. From fundamental device physics and material engineering to system‐level integration, it highlights OECTs' unique mixed ionic‐electronic conduction capabilities.
Heejin Kim, Hyunhak Jeong, Gunuk Wang
wiley   +1 more source

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network. [PDF]

Micromachines (Basel), 2021
Yao Q, Guo Y, Zhang B, Chen J, Zhang J, Zhang M, Guo X, Yao J, Tang W, Liu J.   +9 more
europepmc   +1 more source

Review of Memristors for In‐Memory Computing and Spiking Neural Networks

Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.
Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari, Teresa Serrano‐Gotarredona, Bernabé Linares‐Barranco   +2 more
wiley   +1 more source