Results 81 to 90 of about 779 (192)

Time‐Domain Geoelectrical Modeling and Experimental Validation of Ground Potential Rise in Multilayer Soil Structures during Fault Events

Energy Science &Engineering, Volume 14, Issue 3, Page 1492-1504, March 2026.
This study develops a time‐domain geoelectrical model of ground potential rise (GPR) in multilayer soil that couples electromagnetic field theory with nonlinear fault arc resistance. Finite‐element simulations calibrated against scaled fault‐injection experiments reproduce measured GPR and step/touch voltages within 4.7% error, revealing that steady ...
Wulfran Fendzi Mbasso, Ambe Harrison, Idriss Dagal, Mohamed Metwally Mahmoud, Kenfack Saatong Tsobze, Pradeep Jangir, Muhammad Suhail Shaikh, Aseel Smerat   +7 more
wiley   +1 more source

Self‐Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges

Small, Volume 22, Issue 16, 17 March 2026.
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Fabrizio Torricelli, Giuseppina Pace
wiley   +1 more source

Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE

Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting, 1994
A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and ...
Mitter, C. S., Hefner, A. R., Chen, D. Y., Lee, F. C.   +3 more
openaire   +1 more source

INSULATED GATE BIPOLAR TRANSISTOR TEMPERATURE CALCULATION USING SIMSCAPE/SIMULINK ENVIRONMENT WITH VARIOUS SWITCHING FREQUENCY

Journal of Engineering and Sustainable Development
Because of developments in high-power converters, it has become crucial to investigate how effective inverter performance is. consequently, via being aware of the temperature value of the junction for the inverter switch.
Ahmed Shihab Ahmed, Riyadh Ghanim Omar
doaj   +1 more source

Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss. [PDF]

Micromachines (Basel), 2019
Mao HK, Wang Y, Wu X, Su FW.
europepmc   +1 more source

Research on the Press-pack IGBT with High SCSOA

Kongzhi Yu Xinxi Jishu, 2017
DC breaker is one of the main equipment of HVDC system converter station. As an essential component of DC breaker, the electrical performance and reliability of the press-pack IGBT (insulated gate bipolar transistor) are particularly important.
LENG Guoqing, ZHAO Ge, JIN Rui, GAO Mingchao, WEN Jialiang, PAN Yan   +5 more
doaj  

The Feasibility and Performance of Thin-Film Thermocouples in Measuring Insulated Gate Bipolar Transistor Temperatures in New Energy Electric Drives. [PDF]

Micromachines (Basel)
Xiang B, Li G, Liu Z.
europepmc   +1 more source

Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules. [PDF]

Materials (Basel)
Zhao S, An T, Wang Q, Qin F.
europepmc   +1 more source

Mobility of Carriers in Strong Inversion Layers Associated with Threshold Voltage for Gated Transistors. [PDF]

Micromachines (Basel)
Yang HC, Chi SC, Huang BH, Lai TC, Yang HY.   +4 more
europepmc   +1 more source

Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]

Micromachines (Basel)
Zhang H, Nie M, Dong Q, Liu H, Jia P, Li Z, Fang Y.   +6 more
europepmc   +1 more source