Results 81 to 90 of about 25,365 (244)
The latency-reversing agent HODHBt synergizes with IL-15 to enhance cytotoxic function of HIV-specific T cells
JCI Insight, 2023 IL-15 is under clinical investigation toward the goal of curing HIV infection because of its abilities to reverse HIV latency and enhance immune effector function. However, increased potency through combination with other agents may be needed.Dennis C. Copertino Jr., Carissa S. Holmberg, Jared Weiler, Adam R. Ward, J. Natalie Howard, Callie Levinger, Alina P.S. Pang, Michael J. Corley, Friederike Dündar, Paul Zumbo, Doron Betel, Rajesh T. Gandhi, Deborah K. McMahon, Ronald J. Bosch, Noemi Linden, Bernard J. Macatangay, Joshua C. Cyktor, Joseph J. Eron, John W. Mellors, Colin Kovacs, Erika Benko, Alberto Bosque, R. Brad Jones, for the AIDS Clinical Trials Group (ACTG) A5321 Team +23 moredoaj +1 more sourceAll‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices
Advanced Functional Materials, EarlyView.An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia +11 morewiley +1 more sourceRobust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor
Advanced Functional Materials, EarlyView.P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng +11 morewiley +1 more sourceAchieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva +13 morewiley +1 more sourceTitanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene
Advanced Functional Materials, EarlyView.Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...Bence G. Márkus, Bradlee J. McIntosh, Lili Vajtai, Anna Nyáry, Sándor H. Sipos, Nirmal J. Ghimire, Ferenc Simon, László Forró, Dávid Beke +8 morewiley +1 more sourcePerformance Enhancement of Tin Chloride‐Incorporated Ferroelectric Polymer‐Based Artificial Synapse for Hardware Neural Networks
Advanced Functional Materials, EarlyView.This paper proposes a highly efficient ferroelectric artificial synapse device based on an oxide semiconductor and SnCl2‐inserted P(VDF‐TrFE) gate dielectric layer. This FeFET significantly improved the synaptic performance due to the ion‐dipole interaction.Hyun‐Soo Kim, Hyunkyu Lee, Yeonho Choi, Won Young Jang, Hyungmin Kim, Krishna Moorthy Ponnusamy, Hongseung Lee, Jaewook Yoo, Ji Ye Lee, S. Chandramohan, Seongin Hong, Hagyoul Bae, Hyeon‐Sik Jang, Sang Yeol Lee, Keun Heo +14 morewiley +1 more sourceA Single-Cell Perspective on the Effects of Dopamine in the Regulation of HIV Latency Phenotypes in a Myeloid Cell Model
VirusesPsychostimulants such as methamphetamine (Meth) induce high dopamine (DA) levels in the brain, which can modify immune cells expressing DA receptors. This is relevant in conditions of infection with the human immunodeficiency virus (HIV), overlapping ...Liana V. Basova, Wei Ling Lim, Violaine Delorme-Walker, Tera Riley, Kaylin Au, Daniel Siqueira Lima, Marina Lusic, Ronald J. Ellis, Howard S. Fox, Maria Cecilia Garibaldi Marcondes +9 moredoaj +1 more sourceEffector memory differentiation increases detection of replication-competent HIV-l in resting CD4+ T cells from virally suppressed individuals.
PLoS Pathogens, 2019 Studies have demonstrated that intensive ART alone is not capable of eradicating HIV-1, as the virus rebounds within a few weeks upon treatment interruption.Elizabeth R Wonderlich, Krupa Subramanian, Bryan Cox, Ann Wiegand, Carol Lackman-Smith, Michael J Bale, Mars Stone, Rebecca Hoh, Mary F Kearney, Frank Maldarelli, Steven G Deeks, Michael P Busch, Roger G Ptak, Deanna A Kulpa +13 moredoaj +1 more sourceMimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing
Advanced Functional Materials, EarlyView.Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling Rouven Lamprecht, Ole Gronenberg, Sahitya Yarragolla, Tobias Gergs, Richard Marquardt, Victor Witte, Jürgen Carstensen, George Popkirov, Jan Trieschmann, Lorenz Kienle, Hermann Kohlstedt +10 morewiley +1 more sourceInterface‐Defect Synergy Engineering of Amorphous Ga2O3 for Voltage‐Tunable Dual‐Mode Optoelectronic Devices: Self‐Powered Imaging and Neuromorphic Vision
Advanced Functional Materials, EarlyView.An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...Wanjun Li, Aijiang Yan, Lijuan Ye, Xuanyu Shan, Chunyan Liu, Hong Zhang, Shuren Zhou, Honglin Li, Di Pang, Yan Tang, Guoping Qin, Zhongqiang Wang, Peng Yu, Zhenxiang Cheng +13 morewiley +1 more source