Results 151 to 160 of about 9,722 (211)

Spintronic Devices upon 2D Magnetic Materials and Heterojunctions. [PDF]

ACS Nano
Jia Z, Zhao M, Chen Q, Tian Y, Liu L, Zhang F, Zhang D, Ji Y, Camargo B, Ye K, Sun R, Wang Z, Jiang Y.   +12 more
europepmc   +1 more source

Spin-based magnetic random-access memory for high-performance computing. [PDF]

Natl Sci Rev
Cai K, Jin T, Lew WS.
europepmc   +1 more source

Skyrmion-mediated nonvolatile ternary memory. [PDF]

Sci Rep
Rajib MM, Bindal N, Raj RK, Kaushik BK, Atulasimha J.   +4 more
europepmc   +1 more source

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Spin-transfer torque magnetic random access memory (STT-MRAM)

ACM Journal on Emerging Technologies in Computing Systems, 2013
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell sizes of
Dmytro Apalkov, Alexey Khvalkovskiy, Steven Watts, Vladimir Nikitin, Xueti Tang, Daniel Lottis, Kiseok Moon, Xiao Luo, Eugene Chen, Adrian Ong, Alexander Driskill-Smith, Mohamad Krounbi   +11 more
semanticscholar   +4 more sources

Magnetic Random Access Memory (MRAM)

Journal of Nanoscience and Nanotechnology, 2007
The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading ...
Yuankai, Zheng, Yihong, Wu, Kebin, Lil, Jinjun, Qiu, Guchang, Han, Zaibing, Guo, Ping, Luo, Lihua, An, Zhiyong, Liu, Li, Wang, Seng Ghee, Tan, Baoyu, Zong, Bo, Liu   +12 more
semanticscholar   +6 more sources

Magnetic Tunnel Junction (MTJ) Patterning for Magnetic Random Access Memory (MRAM) Process Applications

Japanese Journal of Applied Physics, 2003
We have developed a top free type magnetic tunnel junction (MTJ) patterning technique that involves tunnel barrier etching with enough time margins for chemical assisted ion etching (CAIE). The approximately 1 nm thick tunnel barrier enables stopping the etching process in a shorter time margin.
Kiyokazu Nagahara, Tomonori Mukai, Nobuyuki Ishiwata, Hiromitu Hada, Shuichi Tahara   +4 more
openaire   +2 more sources

Magnetic Random Access Memory (MRAM)

2002
Early magnetic random access memory used the natural hysteresis of magnetic materials to store data by using two or more sets of current•carrying wires or straps. Magnetic elements were arrayed so that only those which were to be written to received a combination of magnetic fields above a write threshold, while the other elements in the array did not ...
Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata   +2 more
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Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures

IEEE Transactions on Magnetics, 1999
We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance.
H. Boeve, C. Bruynseraede, J. Das, K. Dessein, G. Borghs, J. De Boeck, R.C. Sousa, L.V. Melo, P.P. Freitas   +8 more
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Rate-Compatible Protograph LDPC Codes for Spin-Torque Transfer Magnetic Random Access Memory (STT-MRAM)

2018 Asia-Pacific Magnetic Recording Conference (APMRC), 2018
This paper proposes novel rate-compatible protograph LDPC (RCP-LDPC) codes to correct memory cell errors and mitigate the raw bit error rate (BER) diversity for spin-torque transfer magnetic random access memory (STT-MRAM). Since the STT-MRAM channel is asymmetric, we first apply an independent and identically distributed (i.i.d.) channel adapter to ...
Xingwei Zhong, Kui Cai, Pingping Chen, Zhen Mei   +3 more
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A cascaded channel model and hybrid decoding for spin-torque transfer magnetic random access memory (STT-MRAM)

2017 IEEE International Magnetics Conference (INTERMAG), 2017
I. CASCADED CHANNEL MODEL AND ANALYSIS Spin-torque transfer magnetic random access memory (STT-MRAM) is a promising non-volatile memory technology which is widely considered to replace the dynamic random access memory (DRAM) [1].
K. Cai, K.S. Immink
openaire   +2 more sources