Results 11 to 20 of about 194,360 (332)
Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
E. O. Prado +3 more
semanticscholar +1 more source
工程科学学报, 2021 In recent years, efficient electrical equipment for reducing energy consumption has drawn increasing worldwide attention. Although silicon (Si) has been used as a power semiconductor device, its improving effect on the performance of power semiconductor ...
Chun-yang ZHAO, En-hui WANG, Xin-mei HOU
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FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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Study of Capacitor & Diode Aging effects on Output Ripple in Voltage Regulators and Prognostic Detection of Failure [PDF]
International Journal of Electronics and Telecommunications, 2022 Objectives: To design and simulate a buck converter and detector circuit which can prognostically indicate the power supply failure. Failure of Aluminium Electrolytic Capacitor (AEC) is considered as the parameter causing the power supply failure.
Preethi Sharma K, T. Vijayakumar
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A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications
IEEE Transactions on Industrial Electronics, 2017 Chenzhan Li, Suxuan Guo, Xiaochuan Deng
exaly +2 more sources
High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric
Functional Diamond, 2023 The high frequency H-diamond metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on single diamond substrate using 300°C ALD grown Al2O3 as gate dielectric and passivation layer.
Ma Yuanchen +8 more
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Rectal and Bladder Dose Measurements in the Intracavitary Applications of Cervical Cancer Treatment with HDR Afterloading System: Comparison of TPS Data with MOSFET Detector [PDF]
Journal of Biomedical Physics and Engineering, 2020 Background: Intracavitary brachytherapy plays a major role in management of cervical carcinoma. Assessment of dose received by OAR’s therefore becomes crucial for the estimation of radiation toxicities in HDR brachytherapy.
N Singh +6 more
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Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
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R&D of 3 300V SiC MOSFET With Embedded SBD
Zhongguo dianli, 2021 In this paper, a 3 300 V silicon carbide(SiC) metal-oxide-semiconductor field effect transistors (MOSFET) with embedded schottky barrier diodes(SBD) is developed, where the traditional MOSFET structure is integrated with a titanium-formed Schottky ...
Guoyou LIU +3 more
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Protection of battery-powered devices against accidental swap of power supply connections.
Российский технологический журнал, 2022 Objectives. Battery-powered devices (e.g., wireless sensors, pacemakers, watches and other wrist-worn devices, virtual reality glasses, unmanned aerial vehicles, robots, pyrometers, cars, DC/DC converters, etc.) are widely used today.
V. P. Babenko, V. K. Bityukov
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