Results 251 to 260 of about 194,360 (332)
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20-kW Zero-Voltage-Switching SiC-mosfet Grid Inverter With 300 kHz Switching Frequency
IEEE transactions on power electronics, 2019Although SiC-mosfet has significant advantages on switching performance over traditional Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the increment in the switching frequency.
Ning He +4 more
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A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules
IEEE transactions on power electronics, 2019Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC mosfets) are widely used in higher power density and higher efficiency power electronic applications as a new solution.
Yuan Yang, Yang Wen, Yong Gao
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IEEE Electron Device Letters, 2020
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter.
Xiaochuan Deng +5 more
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A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter.
Xiaochuan Deng +5 more
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Japanese Journal of Applied Physics, 2019
We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying the ...
R. Tanaka +4 more
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We present a vertical GaN planar metal-oxide-semiconductor field-effect transistor (MOSFET) fabricated by an all ion implantation process. The fabricated MOSFET shows an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V, by applying the ...
R. Tanaka +4 more
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A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters
IEEE transactions on power electronics, 2019A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can improve the model's convergence and temperature characteristics. The
Hong Li +5 more
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Achieving Zero Switching Loss in Silicon Carbide MOSFET
IEEE transactions on power electronics, 2019Due to the unipolar conduction mechanism, the switching loss of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) is reduced significantly when compared with silicon insulated gate bipolar transistor (IGBT).
Xuan Li +7 more
semanticscholar +1 more source
Electric and Hybrid Vehicle Technology International, 2019
A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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A new technology that uses chip embedding of power MOSFETs in PCBs can meet increasing requirements for electrical power management systems
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Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules
IEEE transactions on power electronics, 2018This paper presents a thorough characterization of 10 kV SiC mosfet power modules, equipped with third-generation mosfet chips and without external free-wheeling diodes, using the inherent SiC mosfet body-diode instead. The static performance (e.g., IDS–
D. Johannesson, M. Nawaz, K. Ilves
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IEEE transactions on power electronics, 2018
Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an
Zheng Zeng, Xiaoling Li
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Because of fast switching speeds and inevitable stray parameters, the efficiency, security, and stability properties of SiC mosfets in practice are challenged by voltage and current ringing and overshoot. In this paper, the turn-on and off behavior of an
Zheng Zeng, Xiaoling Li
semanticscholar +1 more source