Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]
Adv MaterThis work introduces a multi‐state probabilistic computing system based on Potts‐model p‐bits using stochastic switching floating body metal oxide semiconductor field effect transistors (FB‐MOSFETs). By employing drain‐voltage sharing and one‐hot sampling, the system achieves controllable probabilistic behavior.
Cheong S +9 more
europepmc +2 more sources
Advances in Electrical and Electronic Engineering, 2014 In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such ...
Rawid Banchuin
doaj +1 more source
Hierarchical approach to 'atomistic' 3-D MOSFET simulation [PDF]
, 1999 We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average ...
Asenov, A. +3 more
core +2 more sources
Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020 Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal–oxide–semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing ...
Xi Jiang +7 more
semanticscholar +1 more source
EXPERIMENTAL MODEL OF SINGLE-PHASE DC–DC BOOST CONVERTER FOR 1000 WP PHOTOVOLTAIC APPLICATION
Jurnal Ilmiah SINERGI, 2021 The photovoltaic system is used and utilized as electricity demand in many developed countries, including Indonesia. Nowadays, the photovoltaic system is an alternative source of inexpensive, reasonably priced electricity and easily applied in public ...
Handoko Rusiana Iskandar +3 more
doaj +1 more source
High Frequency Multipurpose SiC MOSFET Driver
Advances in Electrical and Electronic Engineering, 2021 This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of ...
Jan Strossa +4 more
doaj +1 more source
A 2-MHz 2-kW voltage-source inverter for low-temperature plasma generators: implementation of fast switching with a third-order resonant circuit [PDF]
, 1999 This paper presents a specially designed third-order resonant circuit intended to achieve fast switching operation for a voltage-source series-resonant inverter using four MOSFETs.
Akagi, Hirofumi, Fujita, Hideaki
core +1 more source
Pengaturan Keseimbangan Pengisian dan Pengosongan Baterai Asam Timbal
Jurnal Nasional Teknik Elektro, 2016 In this paper proposed a system of balance settings for charging and discharging the lead-acid battery using a microcontroller arduino uno 16U2. The calculation of battery capacity using the method of As (Ampere-second). Before this is done, the value of
Mochammad Rismansyah, Refdinal Nazir
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Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
core +1 more source
High-frequency submicrosecond electroporator
Biotechnology & Biotechnological Equipment, 2016 In this work, we present a novel electroporator which is capable of generating single and bursts of high power (3 kV, 60 A) square wave pulses of variable duration (100 ns to 1 ms) with predefined repetition frequency (1 Hz to 3.5 MHz).
Vitalij Novickij +6 more
doaj +1 more source