Results 21 to 30 of about 194,360 (332)

Comparison and Discussion on Shortcircuit Protections for Silicon-Carbide MOSFET Modules: Desaturation Versus Rogowski Switch-Current Sensor

open access: yesIEEE transactions on industry applications, 2020
Survivability of silicon-carbide (SiC) mosfet modules during short circuit (SC) is essential for modern power electronics systems due to large economic implications.
S. Mocevic   +6 more
semanticscholar   +1 more source

Kontrol Motor Induksi 1 Fasa Menggunakan Raspberry Pi

open access: yesJurnal Teknik Elektro, 2020
Motor induksi paling banyak digunakan pada peralatan industri maupun pada peralatan rumah tangga, karena harganya relatif murah dan perawatannya juga lebih mudah, jika dibandingkan dengan jenis motor lainnya.
Junaidi Asrul   +5 more
doaj   +1 more source

Hierarchical approach to 'atomistic' 3-D MOSFET simulation [PDF]

open access: yes, 1999
We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average ...
Asenov, A.   +3 more
core   +2 more sources

Analysis and Comprehensive Analytical Modeling of Statistical Variations in Subthreshold MOSFET's High Frequency Characteristics

open access: yesAdvances in Electrical and Electronic Engineering, 2014
In this research, the analysis of statistical variations in subthreshold MOSFET's high frequency characteristics defined in terms of gate capacitance and transition frequency, have been shown and the resulting comprehensive analytical models of such ...
Rawid Banchuin
doaj   +1 more source

Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode

open access: yesIEEE Journal of Emerging and Selected Topics in Power Electronics, 2020
Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal–oxide–semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing ...
Xi Jiang   +7 more
semanticscholar   +1 more source

Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]

open access: yes, 2009
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali   +2 more
core   +1 more source

EXPERIMENTAL MODEL OF SINGLE-PHASE DC–DC BOOST CONVERTER FOR 1000 WP PHOTOVOLTAIC APPLICATION

open access: yesJurnal Ilmiah SINERGI, 2021
The photovoltaic system is used and utilized as electricity demand in many developed countries, including Indonesia. Nowadays, the photovoltaic system is an alternative source of inexpensive, reasonably priced electricity and easily applied in public ...
Handoko Rusiana Iskandar   +3 more
doaj   +1 more source

Pengaturan Keseimbangan Pengisian dan Pengosongan Baterai Asam Timbal

open access: yesJurnal Nasional Teknik Elektro, 2016
In this paper proposed a system of balance settings for charging and discharging the lead-acid battery using a microcontroller arduino uno 16U2. The calculation of battery capacity using the method of As (Ampere-second). Before this is done, the value of
Mochammad Rismansyah, Refdinal Nazir
doaj   +1 more source

High Frequency Multipurpose SiC MOSFET Driver

open access: yesAdvances in Electrical and Electronic Engineering, 2021
This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of ...
Jan Strossa   +4 more
doaj   +1 more source

Exploiting the dynamic properties of FET-based chemical sensors [PDF]

open access: yes, 1989
After a long period of mainly static application of ISFETS, other more sophisticated applications are being developed, based on the exploitation of the dynamic properties of ISFETS. Examples are the use of flow-through cells with sample injection and the
Bergveld, P.
core   +3 more sources

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