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2015 25th International Conference on Field Programmable Logic and Applications (FPL), 2015
In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
null Xiaobin Liu +3 more
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In this paper, we describe the use of magnetic RAM (MRAM) in coarse-grained reconfigurable arrays (CGRAs) as a configuration cache to allow for bulk low-energy storage and rapid device reconfiguration. If an energy-saving configuration update for an application is needed, a new configuration can be quickly swapped into compute blocks and interconnect ...
null Xiaobin Liu +3 more
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Fundamentals of MRAM Technology
Journal of Superconductivity, 2002Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different
J. M. Slaughter +7 more
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69th Device Research Conference, 2011
Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching ...
D. Bedau +5 more
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Spin-Transfer Magnetic Random Access Memory (ST-MRAM) devices hold great promise as a universal memory [Katine 2008]. ST-MRAM is non-volatile, has a small cell size, high endurance and may match the speed of SRAM. A disadvantage of the common collinearly magnetized ST-MRAM is their non-deterministic switching process, which leads to long switching ...
D. Bedau +5 more
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Electrical Modeling of STT-MRAM Defects
2018 IEEE International Test Conference (ITC), 2018Spin-transfer-torque magnetic RAM (STT-MRAM) is one of the most promising emerging memory technologies. As various manufacturing vendors make significant efforts to push it to the market, appropriate STT-MRAM testing is of great importance. In this paper, we demonstrate that conventional STT-MRAM defect modeling, which is based on linear resistors, is ...
Wu, Lizhou +4 more
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Margin Comparison of Stoner–Wohlfarth MRAM and Zero Total Anisotropy Toggle Mode MRAM
IEEE Transactions on Magnetics, 2006The attainable operating field margin, giving the same requirements for the memory retention time and half-select robustness, was compared for the zero-total-anisotropy toggle (T)-MRAM with/without biasing and ordinary Stoner-Wohlfarth (SW) type MRAM by analytic/numeric method.
S. Wang, H. Fujiwara
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2017
The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations.
Brajesh Kumar Kaushik +3 more
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The STT (spin-transfer torque) has emerged as a promising memory technology to provide energy efficient, non-volatile, high density memories with low power dissipation and unlimited endurance. In addition, it offers CMOS compatible architectures with high-speed read and write operations.
Brajesh Kumar Kaushik +3 more
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A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM)
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2012STT-MRAM has emerged as a compelling candidate for universal memory, but demands an advanced sensing circuit to achieve the proper sensing margin. In addition, STT-MRAM requires low-current sensing to avoid read disturbance. We report a novel sensing circuit that utilizes a source degeneration scheme and a balanced reference scheme.
Jisu Kim +3 more
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2001
Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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Abstract : Two important goals of Magnetoresistive Random Access Memory (MRAM) development are to improve MRAM manufacturability and to extend MRAM density to 100 nm dimensions. One potential barrier to MRAM manufacturability is associated with the method of write selection in which two orthogonal currents in coincidence must write data, whereas each ...
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2010
Introduction Magnetic ferrite core memory was invented and produced in the 1960s, prior to semiconductor memory. Ferrite cores are made from a paste of ferrite powers, which are sintered at high temperature. The process of forming a discrete core is not as scalable as the integrated circuit process on a silicon wafer.
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Introduction Magnetic ferrite core memory was invented and produced in the 1960s, prior to semiconductor memory. Ferrite cores are made from a paste of ferrite powers, which are sintered at high temperature. The process of forming a discrete core is not as scalable as the integrated circuit process on a silicon wafer.
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Nature Electronics, 2018
Integrating magnetoresistive random access memory with advanced fin field-effect transistor technology provides a route towards energy-efficient computing.
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Integrating magnetoresistive random access memory with advanced fin field-effect transistor technology provides a route towards energy-efficient computing.
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