Results 101 to 110 of about 16,097 (194)

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps. [PDF]

Nanomaterials (Basel), 2023
Park C, Yoon JS, Nam K, Jang H, Park M, Baek RH.   +5 more
europepmc   +1 more source

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]

Sensors (Basel), 2023
Fan H, Tian X, Peng H, Shen Y, Li L, Li M, Gao L.   +6 more
europepmc   +1 more source

Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash. [PDF]

Micromachines (Basel), 2023
Yang T, Xia Z, Fan D, Zhao D, Xie W, Yang Y, Liu L, Zhou W, Huo Z.   +8 more
europepmc   +1 more source

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Favalli M, Zambelli C, Marelli A, Micheloni R, Olivo P.   +4 more
europepmc   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]

Micromachines (Basel), 2021
Yi SI, Kim J.
europepmc   +1 more source

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using a Machine-Learning Method. [PDF]

Nanomaterials (Basel), 2022
Nam K, Park C, Yoon JS, Yun H, Jang H, Cho K, Kang HJ, Park MS, Sim J, Choi HC, Baek RH.   +10 more
europepmc   +1 more source

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. [PDF]

Micromachines (Basel), 2021
Ramesh S, Ajaykumar A, Ragnarsson LÅ, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié JP, Van den Bosch G, Rosmeulen M.   +10 more
europepmc   +1 more source

Enhanced programming efficiency in vertical NAND flash using self-boosting hot carrier injection. [PDF]

Sci Rep
Kim M, Hong J, Kim C, Kim SJ, Hwang S, Baik SJ, Jeon J.   +6 more
europepmc   +1 more source