Results 41 to 50 of about 16,097 (194)
Advancing the Frontiers of HfO<sub>2</sub>-Based Ferroelectric Memories: Innovative Concepts from Materials to Applications. [PDF]
Adv MaterHfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zhou Z +9 more
europepmc +2 more sources
Architectural and Integration Options for 3D NAND Flash Memories
Computers, 2017 Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in ...
Rino Micheloni +3 more
doaj +1 more source
On the Capacity of Multilevel NAND Flash Memory Channels
, 2016 In this paper, we initiate a first information-theoretic study on multilevel NAND flash memory channels with intercell interference. More specifically, for a multilevel NAND flash memory channel under mild assumptions, we first prove that such a channel ...
Han, Guangyue +2 more
core +1 more source
Capacity of Multilevel NAND Flash Memory Channels [PDF]
IEEE Transactions on Information Theory, 2017 zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Li, Y, Kavcic, A, Han, G
openaire +4 more sources
Life-Cycle Assessment of NAND Flash Memory [PDF]
IEEE Transactions on Semiconductor Manufacturing, 2011 Solid state drives (SSDs) show potential for environmental benefits over magnetic data storage due to their lower power consumption. To investigate this possibility, a life-cycle assessment (LCA) of NAND flash over five technology generations (150 nm, 120 nm, 90 nm, 65 nm, and 45 nm) is presented to quantify environmental impacts occurring in flash ...
Boyd, Sarah, Horvath, A, Dornfeld, David
openaire +2 more sources
EngIn order to successfully achieve mass production in NAND flash memory, a novel test procedure has been proposed to electrically detect and screen the channel hole defects, such as Not-Open, Bowing, and Bending, which are unique in high-density 3D NAND ...
Beomjun Kim +2 more
doaj +1 more source
Design and Optimization of Adaptable BCH Codecs for NAND Flash Memories [PDF]
, 2013 NAND flash memories represent a key storage technology for solid-state storage systems. However, they suffer from serious reliability and endurance issues that must be mitigated by the use of proper error correction codes.
Di Carlo, Stefano +3 more
core +1 more source
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2022 Experimental results indicate that the conventional program suspend scheme in 3D NAND flash memory chip can generate unexpected additional read fail bits and reduce the reliability of 3D NAND flash memory. These extra read fail bits are observed when the
Zhichao Du +11 more
doaj +1 more source
Trade-offs between Instantaneous and Total Capacity in Multi-Cell Flash Memories [PDF]
, 2012 The limited endurance of flash memories is a major design concern for enterprise storage systems. We propose a method to increase it by using relative (as opposed to fixed) cell levels and by representing the information with Write Asymmetric Memory ...
Bruck, Jehoshua +2 more
core +2 more sources
Review of ferroelectric field‐effect transistors for three‐dimensional storage applications
Nano Select, 2021 The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market.
Hyeon Woo Park +2 more
doaj +1 more source