Results 101 to 110 of about 10,782 (198)

Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation

AIP Advances
In order to estimate the bit upset ratio of NAND flash memory induced by heavy ion irradiation, starting from the physical mechanism of the bit upset of NAND flash memory, an analytical model based on statistical methods was developed to describe the ...
Jiangkun Sheng, Mengtong Qiu, Peng Xu, Lili Ding, Yinhong Luo, Zhibin Yao, Fengqi Zhang, Shilong Gou, Zujun Wang, Yuanyuan Xue   +9 more
doaj   +1 more source

Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
An U, Yoon G, Go D, Park J, Kim D, Kim J, Lee JS.   +6 more
europepmc   +1 more source

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory. [PDF]

Micromachines (Basel), 2023
You K, Jin L, Jia J, Huo Z.
europepmc   +1 more source

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors. [PDF]

Sensors (Basel), 2023
Fan H, Tian X, Peng H, Shen Y, Li L, Li M, Gao L.   +6 more
europepmc   +1 more source

A machine learning framework for predictive electron density modelling to enhance 3D NAND flash memory performance

e-Prime: Advances in Electrical Engineering, Electronics and Energy
Data storage in electronic devices has been revolutionised by 3D NAND flash memory. However, polycrystalline silicon and grain boundaries offer issues that greatly affect memory performance in terms of string current and Program-Erase Threshold Voltage ...
Dikendra Verma, Upendra Mohan Bhatt, Anurag Vidyarthi   +2 more
doaj   +1 more source

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference. [PDF]

Micromachines (Basel), 2021
Yi SI, Kim J.
europepmc   +1 more source

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory. [PDF]

Sci Adv, 2021
Kim MK, Kim IJ, Lee JS.
europepmc   +1 more source

Prediction of Random Telegraph Noise-Induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning

IEEE Journal of the Electron Devices Society
Random telegraph noise (RTN) shifts the threshold voltage (Vt) of 3D NAND flash memory cells, making it a key factor of the device malfunction. The aim of this study is to predict the distribution of RTN induced ${\mathrm { V}}_{\mathrm { t}}$ shift in
Eunseok Oh, Hyungcheol Shin
doaj   +1 more source

Memorie Flash a NAND

In questa tesi verranno trattate le memorie Flash. Partendo da una breve introduzione all'argomento, si studierà prima il funzionamento a livello fisico del transistor, il suo inserimento in un'architettura a NAND e i metodi di accesso e scrittura del dati in tale contesto.
openaire   +1 more source