Results 51 to 60 of about 10,782 (198)
On Benchmarking Embedded Linux Flash File Systems
, 2012 Due to its attractive characteristics in terms of performance, weight and power consumption, NAND flash memory became the main non volatile memory (NVM) in embedded systems.
Boukhobza, Jalil +2 more
core +2 more sources
Trade-offs between Instantaneous and Total Capacity in Multi-Cell Flash Memories [PDF]
, 2012 The limited endurance of flash memories is a major design concern for enterprise storage systems. We propose a method to increase it by using relative (as opposed to fixed) cell levels and by representing the information with Write Asymmetric Memory ...
Bruck, Jehoshua +2 more
core +2 more sources
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Iterative Pseudo-Soft-Reliability-Based Majority-Logic Decoding for NAND Flash Memory
IEEE Access, 2021 This paper proposes a decoding algorithm for nonbinary low-density parity-check (NB-LDPC) codes, aiming to improve the error rate performance for NAND flash memory. Several NB-LDPC decoding methods for NAND flash memory have been studied. Some approaches
Kyeong Bin Park, Ki-Seok Chung
doaj +1 more source
Advanced Electronic Materials, EarlyView.This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
Sensors, 2020 NAND flash memory-based storage devices are vulnerable to errors induced by NAND flash memory cells. Error-correction codes (ECCs) are integrated into the flash memory controller to correct errors in flash memory. However, since ECCs show inherent limits
Seung-Ho Lim, Ki-Woong Park
doaj +1 more source
Firmware uploading station for the use in mass production of variable-frequency drives [PDF]
, 2013 Työssä tutustutaan Flash-muistiteknologiaan ja suunnitellaan asema, joka lataa ohjelmiston taajuusmuuttajan Flash-muistiin. Flash-muistien käsittely rajataan kahteen yleisimpään tyyppiin: NAND- ja NOR-muisteihin.
Ainola, Eppu
core
Reliability and Hardware Implementation of Rank Modulation Flash Memory [PDF]
, 2015 We review a novel data representation scheme for NAND flash memory named rank modulation (RM), and discuss its hardware implementation. We show that under the normal threshold voltage (Vth) variations, RM has intrinsic read reliability advantage over ...
Bruck, Jehoshua +3 more
core +1 more source
Advanced Electronic Materials, EarlyView.Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan +21 more
wiley +1 more source
Investigation of Retention Noise for 3-D TLC NAND Flash Memory
IEEE Journal of the Electron Devices Society, 2019 In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated.
Kunliang Wang +3 more
doaj +1 more source